Deep-UV Transparent Conducting Oxide La-Doped SrSnO3with a High Figure of Merit

Juhan Kim, Hwanhui Yun, Jihoon Seo, Jae Ha Kim, Jae Hoon Kim, K. Andre Mkhoyan, Bongju Kim, Kookrin Char

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

Perovskite stannate SrSnO3(SSO) is attracting attention as ultraviolet transparent conducting oxides (UV TCOs) due to its ultrawide band gap and high conductivity. Here, we investigate in detail the thickness-dependent electrical, structural, and optical properties of sequentially strain-relaxed La-doped SrSnO3(SLSO) epitaxial thin films. We find that the SLSO films grow as an orthorhombic Pnma phase with a-a-c+in the c+direction under the tensile strain. With the strain relaxation, as the films become thicker, vertical grain boundaries are created and the orthorhombic phase becomes reoriented to all three possible orientations. Simultaneously, the conductance starts to deviate from the linear behavior with increasing film thickness. Through the analysis of thickness fringes in optical transmittance, we found that a 120 nm thick nominally 4% La-doped SrSnO3film has a figure of merit (φTC= 2.65 × 10-3ω-1) at λ = 300 nm in the deep-UV region, which is the highest value among the well-known candidates for UV TCOs reported to date.

Original languageEnglish (US)
Pages (from-to)3623-3631
Number of pages9
JournalACS Applied Electronic Materials
Volume4
Issue number7
DOIs
StatePublished - Jul 26 2022

Bibliographical note

Funding Information:
A part of this study has been performed using facilities at the IBS Center for Correlated Electron Systems, Seoul National University. The electron microscopy effort (H.Y. and K.A.M.) was supported by the NSF through the MRSEC (DMR-2011401). Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from the NSF through the MRSEC program. This work at Yonsei University was supported by the National Research Foundation (NRF) grants funded by the Korean government (MSIT; grant 2021R1A2C3004989) and the SRC program (vdWMRC; grant 2017R1A5A1014862).

Publisher Copyright:
© 2022 American Chemical Society.

Keywords

  • La-doped SrSnO
  • figure of merit
  • thickness-dependent properties
  • ultraviolet transparent conducting oxides
  • ultrawide band gap semiconductors

MRSEC Support

  • Partial

PubMed: MeSH publication types

  • Journal Article

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