Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities

Ayan Paul; Dong Jiao; Sachin S Sapatnekar; Chris H. Kim

doi:10.1109/ASSCC.2013.6690979

Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities

Ayan Paul, Dong Jiao, Sachin S Sapatnekar, Chris H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

11 Scopus citations

Abstract

A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm² at a peak efficiency of 85% from the step-down converter and 0.9W/mm² at a peak efficiency of 82% from the voltage doubler.

Original language	English (US)
Title of host publication	Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Pages	49-52
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2013.6690979
State	Published - Dec 1 2013
Event	2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 - Singapore, Singapore Duration: Nov 11 2013 → Nov 13 2013

Publication series

Name	Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013

Other

Other	2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
Country/Territory	Singapore
City	Singapore
Period	11/11/13 → 11/13/13

Keywords

DVFS
Deep trench capacitor
Efficiency
Power density
Switched capacitor converter

Publisher link

10.1109/ASSCC.2013.6690979

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Paul, A., Jiao, D., Sapatnekar, S. S., & Kim, C. H. (2013). Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities. In Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 (pp. 49-52). Article 6690979 (Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013). https://doi.org/10.1109/ASSCC.2013.6690979

Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities. / Paul, Ayan; Jiao, Dong; Sapatnekar, Sachin S et al.
Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013. 2013. p. 49-52 6690979 (Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Paul, A, Jiao, D, Sapatnekar, SS & Kim, CH 2013, Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities. in Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013., 6690979, Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013, pp. 49-52, 2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013, Singapore, Singapore, 11/11/13. https://doi.org/10.1109/ASSCC.2013.6690979

Paul A, Jiao D, Sapatnekar SS , Kim CH. Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities. In Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013. 2013. p. 49-52. 6690979. (Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013). doi: 10.1109/ASSCC.2013.6690979

Paul, Ayan ; Jiao, Dong ; Sapatnekar, Sachin S et al. / Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities. Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013. 2013. pp. 49-52 (Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013).

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abstract = "A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.",

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AB - A switched capacitor step-down converter fabricated in 32nm CMOS achieves a 5X improvement in response time for fast dynamic voltage and frequency scaling (DVFS). We also present a step-up converter based on a bi-directional voltage doubler, which is capable of reducing supply noise up to 45% by opportunistically borrowing current from adjacent idle power domains. Using ultra-high density deep trench capacitors, we are able to achieve an output power density of 2.78W/mm2 at a peak efficiency of 85% from the step-down converter and 0.9W/mm2 at a peak efficiency of 82% from the voltage doubler.

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Deep trench capacitor based step-up and step-down DC/DC converters in 32nm SOI with opportunistic current borrowing and fast DVFS capabilities

Abstract

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