Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

G. E. Rowlands; T. Rahman; J. A. Katine; J. Langer; A. Lyle; H. Zhao; J. G. Alzate; A. A. Kovalev; Y. Tserkovnyak; Z. M. Zeng; H. W. Jiang; K. Galatsis; Y. M. Huai; P. Khalili Amiri; K. L. Wang; I. N. Krivorotov; J. P. Wang

doi:10.1063/1.3565162

Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

G. E. Rowlands, T. Rahman, J. A. Katine, J. Langer, A. Lyle, H. Zhao, J. G. Alzate, A. A. Kovalev, Y. Tserkovnyak, Z. M. Zeng, H. W. Jiang, K. Galatsis, Y. M. Huai, P. Khalili Amiri, K. L. Wang, I. N. Krivorotov, J. P. Wang

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Abstract

We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.

Original language	English (US)
Article number	102509
Journal	Applied Physics Letters
Volume	98
Issue number	10
DOIs	https://doi.org/10.1063/1.3565162
State	Published - Mar 7 2011

Bibliographical note

Funding Information:
This work was supported by DARPA Grant No. HR0011-09-C-0114, by NSF Grant Nos. DMR-0748810 and No. ECCS-0701458, and by Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics.

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Rowlands, G. E., Rahman, T., Katine, J. A., Langer, J., Lyle, A., Zhao, H., Alzate, J. G., Kovalev, A. A., Tserkovnyak, Y., Zeng, Z. M., Jiang, H. W., Galatsis, K., Huai, Y. M., Amiri, P. K., Wang, K. L., Krivorotov, I. N., & Wang, J. P. (2011). Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers. Applied Physics Letters, 98(10), Article 102509. https://doi.org/10.1063/1.3565162

Rowlands, GE, Rahman, T, Katine, JA, Langer, J, Lyle, A, Zhao, H, Alzate, JG, Kovalev, AA, Tserkovnyak, Y, Zeng, ZM, Jiang, HW, Galatsis, K, Huai, YM, Amiri, PK, Wang, KL, Krivorotov, IN & Wang, JP 2011, 'Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers', Applied Physics Letters, vol. 98, no. 10, 102509. https://doi.org/10.1063/1.3565162

@article{5ff621e3da554abc80c152efea3510f3,

title = "Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers",

abstract = "We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.",

author = "Rowlands, {G. E.} and T. Rahman and Katine, {J. A.} and J. Langer and A. Lyle and H. Zhao and Alzate, {J. G.} and Kovalev, {A. A.} and Y. Tserkovnyak and Zeng, {Z. M.} and Jiang, {H. W.} and K. Galatsis and Huai, {Y. M.} and Amiri, {P. Khalili} and Wang, {K. L.} and Krivorotov, {I. N.} and Wang, {J. P.}",

note = "Funding Information: This work was supported by DARPA Grant No. HR0011-09-C-0114, by NSF Grant Nos. DMR-0748810 and No. ECCS-0701458, and by Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics.",

year = "2011",

month = mar,

day = "7",

doi = "10.1063/1.3565162",

language = "English (US)",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

AU - Rowlands, G. E.

AU - Rahman, T.

AU - Katine, J. A.

AU - Langer, J.

AU - Lyle, A.

AU - Zhao, H.

AU - Alzate, J. G.

AU - Kovalev, A. A.

AU - Tserkovnyak, Y.

AU - Zeng, Z. M.

AU - Jiang, H. W.

AU - Galatsis, K.

AU - Huai, Y. M.

AU - Amiri, P. Khalili

AU - Wang, K. L.

AU - Krivorotov, I. N.

AU - Wang, J. P.

N1 - Funding Information: This work was supported by DARPA Grant No. HR0011-09-C-0114, by NSF Grant Nos. DMR-0748810 and No. ECCS-0701458, and by Nanoelectronics Research Initiative through the Western Institute of Nanoelectronics.

PY - 2011/3/7

Y1 - 2011/3/7

N2 - We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.

AB - We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.

UR - http://www.scopus.com/inward/record.url?scp=79952642481&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79952642481&partnerID=8YFLogxK

U2 - 10.1063/1.3565162

DO - 10.1063/1.3565162

M3 - Article

AN - SCOPUS:79952642481

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 102509

ER -

Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers

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