DC bias effects on bulk silicon and porous silicon substrates

Isaac K. Itotia, Rhonda Franklin Drayton

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The relationship between attenuation and biasing for CPW architectures on bulk and porous silicon films is investigated. Biasing effects on low resistivity silicon can have loss variations as high as 34 dB/cm under negative bias (0 to -10 V) and 2 dB/cm for positive bias (0 to 10 V) conditions. While the inclusion of an oxide film substantially reduces loss variation (< 0.1 dB/cm), the use of a 68% porous silicon film can provide further stability (< 0.01 dB/cm) in addition to lowered attenuation in the range of 1.3 to 3 dB/cm from 5 to 20 GHz.

Original languageEnglish (US)
Pages (from-to)663-666
Number of pages4
JournalIEEE Antennas and Propagation Society, AP-S International Symposium (Digest)
Volume2
StatePublished - Sep 1 2003
Event2003 IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North American Radio Science Meeting - Columbus, OH, United States
Duration: Jun 22 2003Jun 27 2003

Keywords

  • Bias dependent attenuation
  • CPW attenuation
  • Porous silicon

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