Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers

A. Lozovoi, D. Daw, H. Jayakumar, C. A. Meriles

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly detected photoluminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microscopic structure and composition remain elusive. Our results may prove relevant to the growing set of applications that rely on CVD-grown single-crystal diamond.

Original languageEnglish (US)
Article number053602
JournalPhysical Review Materials
Volume4
Issue number5
DOIs
StatePublished - May 2020
Externally publishedYes

Bibliographical note

Funding Information:
We thank V. Deligiannakis and M. Tamargo for assistance with the infrared measurements. We acknowledge support from the National Science Foundation through Grants No. NSF-1914945 and No. NSF-1903839, and from Research Corporation for Science Advancement through a FRED award; we also acknowledge access to the facilities and research infrastructure of the NSF CREST IDEALS, Grant No. NSF-HRD-1547830.

Publisher Copyright:
© 2020 American Physical Society.

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