Oscillations in the time evolution of electron diffraction during MBE growth of GaAs are shown to be related to periodic variations in the step distributions on GaAs surfaces during epitaxial growth. Unintentionally doped GaAs surfaces were first prepared by MBE. Then the Ga flux is interrupted until an instrument limited diffraction pattern was obtained. During this process the angular width of the specular beam was measured versus time. When the Ga flux is reapplied there are intensity oscillations that are weak near the Bragg angle. At the Bragg angle, where the diffraction is insensitive to surface steps, the length of the specular RHEED streak does not change. At angles between the Bragg angles, where steps lengthen the streaks, there are periodic variations in the streak length. We interpret the results in terms of a model in which a partially completed surface has a step distribution with smaller average terrace lengths than a completed surface.
|Original language||English (US)|
|Number of pages||6|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 1 1983|
|Event||Proc of the Annu Conf on the Phys and Chem of Semicond Interfaces, 10th - Santa Fe, NM, USA|
Duration: Jan 25 1983 → Jan 27 1983