We have studied the cyclotron resonance of electrons and holes in various types of InMnAs-based structures at ultrahigh magnetic fields. Our observations, in conjunction with an eight-band effective mass model including the s-d and p-d exchange interactions with Mn d-electrons, unambiguously suggest the existence of s-like and p-like delocalized carriers in all samples studied. The samples studied include Paramagnetic n-type In1-xMnxAs films (x ∼ 0.12) grown on GaAs, ferromagnetic p-type In1-xMn xAs films (x ∼ 0.025) grown on GaAs with Curie temperatures (TC) > 5 K, paramagnetic n-type In1-xMn xAs/InAs superlattices, ferromagnetic p-type In1-xMn xAs/GaSb heterostructures (x ∼ 0.09) with TC = 30-60 K, and ferromagnetic (In0.53Ga0.47)1-xMn xAs/In0.53Ga0.47As heterostructures (x ∼ 0.05) grown on InP with TC up to 120 K.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of Superconductivity and Novel Magnetism|
|State||Published - Dec 1 2003|
- Cyclotron resonance
- High magnetic fields
- III-V magnetic semiconductors