Cyclotron resonance of electrons and holes in paramagnetic and ferromagnetic InMnAs-based films and heterostructures

G. A. Khodaparast, M. A. Zudov, J. Kono, Y. H. Matsuda, T. Ikaida, S. Ikeda, N. Miura, T. Slupinski, A. Oiwa, H. Munekata, G. D. Sanders, Y. Sun, C. J. Stanton

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Abstract

We have studied the cyclotron resonance of electrons and holes in various types of InMnAs-based structures at ultrahigh magnetic fields. Our observations, in conjunction with an eight-band effective mass model including the s-d and p-d exchange interactions with Mn d-electrons, unambiguously suggest the existence of s-like and p-like delocalized carriers in all samples studied. The samples studied include Paramagnetic n-type In1-xMnxAs films (x ∼ 0.12) grown on GaAs, ferromagnetic p-type In1-xMn xAs films (x ∼ 0.025) grown on GaAs with Curie temperatures (TC) > 5 K, paramagnetic n-type In1-xMn xAs/InAs superlattices, ferromagnetic p-type In1-xMn xAs/GaSb heterostructures (x ∼ 0.09) with TC = 30-60 K, and ferromagnetic (In0.53Ga0.47)1-xMn xAs/In0.53Ga0.47As heterostructures (x ∼ 0.05) grown on InP with TC up to 120 K.

Original languageEnglish (US)
Pages (from-to)107-110
Number of pages4
JournalJournal of Superconductivity and Novel Magnetism
Volume16
Issue number1
StatePublished - 2003

Bibliographical note

Funding Information:
This work was supported by DARPA through grant No. MDA972-00-1-0034 and NEDO International Joint Research Program.

Keywords

  • Cyclotron resonance
  • Ferromagnetism
  • High magnetic fields
  • III-V magnetic semiconductors

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