Abstract
We have studied the cyclotron resonance of electrons and holes in various types of InMnAs-based structures at ultrahigh magnetic fields. Our observations, in conjunction with an eight-band effective mass model including the s-d and p-d exchange interactions with Mn d-electrons, unambiguously suggest the existence of s-like and p-like delocalized carriers in all samples studied. The samples studied include Paramagnetic n-type In1-xMnxAs films (x ∼ 0.12) grown on GaAs, ferromagnetic p-type In1-xMn xAs films (x ∼ 0.025) grown on GaAs with Curie temperatures (TC) > 5 K, paramagnetic n-type In1-xMn xAs/InAs superlattices, ferromagnetic p-type In1-xMn xAs/GaSb heterostructures (x ∼ 0.09) with TC = 30-60 K, and ferromagnetic (In0.53Ga0.47)1-xMn xAs/In0.53Ga0.47As heterostructures (x ∼ 0.05) grown on InP with TC up to 120 K.
Original language | English (US) |
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Pages (from-to) | 107-110 |
Number of pages | 4 |
Journal | Journal of Superconductivity and Novel Magnetism |
Volume | 16 |
Issue number | 1 |
State | Published - 2003 |
Bibliographical note
Funding Information:This work was supported by DARPA through grant No. MDA972-00-1-0034 and NEDO International Joint Research Program.
Keywords
- Cyclotron resonance
- Ferromagnetism
- High magnetic fields
- III-V magnetic semiconductors