Projects per year
Abstract
A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.
Original language | English (US) |
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Pages (from-to) | 12654-12662 |
Number of pages | 9 |
Journal | ACS Applied Materials and Interfaces |
Volume | 9 |
Issue number | 14 |
DOIs | |
State | Published - Apr 12 2017 |
Bibliographical note
Publisher Copyright:© 2017 American Chemical Society.
Keywords
- 2D material
- black phosphorus
- heterostructure
- MOSFET
- phosphorene
MRSEC Support
- Partial
PubMed: MeSH publication types
- Journal Article
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- 2 Finished
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University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project
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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C. (Coordinator), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Goldman, A. M. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Koester, S. J. (Senior Investigator), He, T. (Researcher), Jeong, J. S. (Researcher), Koirala, S. (Researcher), Paul, A. (Researcher), Thoutam, L. R. (Researcher) & Yu, G. (Researcher)
11/1/14 → 10/31/20
Project: Research project