Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Matthew C. Robbins; Seon Namgung; Sang Hyun Oh; Steven J. Koester

doi:10.1021/acsami.6b14477

Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Matthew C. Robbins, Seon Namgung, Sang Hyun Oh, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al₂O₃, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.

Original language	English (US)
Pages (from-to)	12654-12662
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	14
DOIs	https://doi.org/10.1021/acsami.6b14477
State	Published - Apr 12 2017

Bibliographical note

Funding Information:
This work was partially supported by the Air Force Office of Scientific Research under Award FA9550-14-1-0277 the National Science Foundation (NSF) under Grant ECCS-1102278, and the NSF through the University of Minnesota MRSEC under Award DMR-1420013. Device fabrication was carried out in the Minnesota Nano Center, which receives partial support from NSF through National Nanotechnology Coordinated Infrastructure (NNCI).

Publisher Copyright:
© 2017 American Chemical Society.

Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.

Keywords

2D material
black phosphorus
heterostructure
MOSFET
phosphorene

How much support was provided by MRSEC?

Partial

PubMed: MeSH publication types

Journal Article

Access

10.1021/acsami.6b14477

Cite this

@article{2edf7f2b237d419b83f787978792502d,

title = "Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices",

abstract = "A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.",

keywords = "2D material, black phosphorus, heterostructure, MOSFET, phosphorene",

author = "Robbins, {Matthew C.} and Seon Namgung and Oh, {Sang Hyun} and Koester, {Steven J.}",

note = "Funding Information: This work was partially supported by the Air Force Office of Scientific Research under Award FA9550-14-1-0277 the National Science Foundation (NSF) under Grant ECCS-1102278, and the NSF through the University of Minnesota MRSEC under Award DMR-1420013. Device fabrication was carried out in the Minnesota Nano Center, which receives partial support from NSF through National Nanotechnology Coordinated Infrastructure (NNCI). Publisher Copyright: {\textcopyright} 2017 American Chemical Society. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.",

year = "2017",

month = apr,

day = "12",

doi = "10.1021/acsami.6b14477",

language = "English (US)",

volume = "9",

pages = "12654--12662",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "14",

}

TY - JOUR

T1 - Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

AU - Robbins, Matthew C.

AU - Namgung, Seon

AU - Oh, Sang Hyun

AU - Koester, Steven J.

N1 - Funding Information: This work was partially supported by the Air Force Office of Scientific Research under Award FA9550-14-1-0277 the National Science Foundation (NSF) under Grant ECCS-1102278, and the NSF through the University of Minnesota MRSEC under Award DMR-1420013. Device fabrication was carried out in the Minnesota Nano Center, which receives partial support from NSF through National Nanotechnology Coordinated Infrastructure (NNCI). Publisher Copyright: © 2017 American Chemical Society. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.

PY - 2017/4/12

Y1 - 2017/4/12

N2 - A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.

AB - A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.

KW - 2D material

KW - black phosphorus

KW - heterostructure

KW - MOSFET

KW - phosphorene

UR - http://www.scopus.com/inward/record.url?scp=85017545667&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85017545667&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b14477

DO - 10.1021/acsami.6b14477

M3 - Article

C2 - 28286947

AN - SCOPUS:85017545667

VL - 9

SP - 12654

EP - 12662

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 14

ER -

Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

PubMed: MeSH publication types

Access

Other files and links

Fingerprint

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this

Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

PubMed: MeSH publication types

Access

Other files and links

Fingerprint

Projects

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

Cite this