Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Matthew C. Robbins; Seon Namgung; Sang Hyun Oh; Steven J. Koester

doi:10.1021/acsami.6b14477

Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Matthew C. Robbins, Seon Namgung, Sang Hyun Oh, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al₂O₃, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.

Original language	English (US)
Pages (from-to)	12654-12662
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	9
Issue number	14
DOIs	https://doi.org/10.1021/acsami.6b14477
State	Published - Apr 12 2017

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Publisher Copyright:
© 2017 American Chemical Society.

Keywords

2D material
black phosphorus
heterostructure
MOSFET
phosphorene

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10.1021/acsami.6b14477

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title = "Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices",

abstract = "A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.",

keywords = "2D material, black phosphorus, heterostructure, MOSFET, phosphorene",

author = "Robbins, {Matthew C.} and Seon Namgung and Oh, {Sang Hyun} and Koester, {Steven J.}",

note = "Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

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AU - Robbins, Matthew C.

AU - Namgung, Seon

AU - Oh, Sang Hyun

AU - Koester, Steven J.

PY - 2017/4/12

Y1 - 2017/4/12

N2 - A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.

AB - A high spatial resolution, cyclical thinning method for realizing black phosphorus (BP) heterostructures is reported. This process utilizes a cyclic technique involving BP surface oxidation and vacuum annealing to create BP flakes as thin as 1.6 nm. The process also utilizes a spatially patternable mask created by evaporating Al that oxidizes to form Al2O3, which stabilizes the unetched BP regions and enables the formation of lateral heterostructures with spatial resolution as small as 150 nm. This thinning/patterning technique has also been used to create the first-ever lateral heterostructure BP metal oxide semiconductor field-effect transistor (MOSFET), in which half of a BP flake was thinned in order to increase its band gap. This heterostructure MOSFET showed an ON/OFF current ratio improvement of 1000× compared to homojunction MOSFETs.

KW - 2D material

KW - black phosphorus

KW - heterostructure

KW - MOSFET

KW - phosphorene

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Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Abstract

Bibliographical note

Keywords

MRSEC Support

PubMed: MeSH publication types

Publisher link

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University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

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Cyclical Thinning of Black Phosphorus with High Spatial Resolution for Heterostructure Devices

Abstract

Bibliographical note

Keywords

MRSEC Support

PubMed: MeSH publication types

Publisher link

Find It

Other files and links

Fingerprint

Projects

University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-1: Electrostatic Control of Materials

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