Within the effective mass approximation, we study the curvature effects on the electronic and transport properties of semiconductor films. We investigate how the geometry-induced potential resulting exclusively from periodic ripples in the film induces electronic confinement and a superlattice band structure. For fixed curvature parameters, such a confinement can be easily tuned by an external electric field, hence features of the superlattice band structure such as its energy gaps and band curvature can be controlled by an external parameter. We also show that, for some values of curvature and electric field, it is possible to obtain massless Dirac bands for a smooth curved structure. Moreover, we use a wave packet propagation method to demonstrate that the ripples are responsible for a significant inter-sub-band transition, specially for moderate values of the ripple height.
|Original language||English (US)|
|Number of pages||6|
|Journal||Physica E: Low-Dimensional Systems and Nanostructures|
|State||Published - May 2018|
Bibliographical noteFunding Information:
Discussions with N. S. Almeida are gratefully acknowledged. This work was financially supported by the Brazilian National Council for Scientific and Technological Development ( CNPq ).
- Bent semiconductor films
- Electronic properties
- Transport properties