Current-voltage hysteresis and memory effects in ambipolar organic thin film transistors based on a substituted oligothiophene

Cai Xiuyu, Christopher P. Gerlach, C. Daniel Frisbie

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

An ambipolar 5,5′″-bis(fluoroalkyl)quarterthiophene exhibits memory effects in thin film transistors. The memory effect is based on hysteresis in the transfer (ID-VG) characteristics that is apparently due to charge trapping. Hysteresis induced by gate-bias stress was exploited to study nonvolatile floating gate memory effects. The ON state retention time for this memory device is ∼70 min. The temperature dependence of the retention time revealed a trapping mechanism with a trapping activation energy of ∼400 meV.

Original languageEnglish (US)
Pages (from-to)452-456
Number of pages5
JournalJournal of Physical Chemistry C
Volume111
Issue number1
DOIs
StatePublished - Jan 11 2007

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