Current-voltage hysteresis and memory effects in ambipolar organic thin film transistors based on a substituted oligothiophene

Cai Xiuyu; Christopher P. Gerlach; C. Daniel Frisbie

doi:10.1021/jp065147c

Current-voltage hysteresis and memory effects in ambipolar organic thin film transistors based on a substituted oligothiophene

Cai Xiuyu, Christopher P. Gerlach, C. Daniel Frisbie

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

An ambipolar 5,5′″-bis(fluoroalkyl)quarterthiophene exhibits memory effects in thin film transistors. The memory effect is based on hysteresis in the transfer (I_D-V_G) characteristics that is apparently due to charge trapping. Hysteresis induced by gate-bias stress was exploited to study nonvolatile floating gate memory effects. The ON state retention time for this memory device is ∼70 min. The temperature dependence of the retention time revealed a trapping mechanism with a trapping activation energy of ∼400 meV.

Original language	English (US)
Pages (from-to)	452-456
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	111
Issue number	1
DOIs	https://doi.org/10.1021/jp065147c
State	Published - Jan 11 2007

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10.1021/jp065147c

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title = "Current-voltage hysteresis and memory effects in ambipolar organic thin film transistors based on a substituted oligothiophene",

abstract = "An ambipolar 5,5′″-bis(fluoroalkyl)quarterthiophene exhibits memory effects in thin film transistors. The memory effect is based on hysteresis in the transfer (ID-VG) characteristics that is apparently due to charge trapping. Hysteresis induced by gate-bias stress was exploited to study nonvolatile floating gate memory effects. The ON state retention time for this memory device is ∼70 min. The temperature dependence of the retention time revealed a trapping mechanism with a trapping activation energy of ∼400 meV.",

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AB - An ambipolar 5,5′″-bis(fluoroalkyl)quarterthiophene exhibits memory effects in thin film transistors. The memory effect is based on hysteresis in the transfer (ID-VG) characteristics that is apparently due to charge trapping. Hysteresis induced by gate-bias stress was exploited to study nonvolatile floating gate memory effects. The ON state retention time for this memory device is ∼70 min. The temperature dependence of the retention time revealed a trapping mechanism with a trapping activation energy of ∼400 meV.

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Current-voltage hysteresis and memory effects in ambipolar organic thin film transistors based on a substituted oligothiophene

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