Current-voltage characteristics of organic heterostructure devices with insulating spacer layers

Sun Yin; Wanyi Nie; Aditya D. Mohite; Avadh Saxena; Darryl L. Smith; P. Paul Ruden

doi:10.1016/j.orgel.2015.05.018

Current-voltage characteristics of organic heterostructure devices with insulating spacer layers

Sun Yin, Wanyi Nie, Aditya D. Mohite, Avadh Saxena, Darryl L. Smith, P. Paul Ruden

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. We present a device model to describe this behavior, and we discuss relevant experimental data.

Original language	English (US)
Pages (from-to)	26-29
Number of pages	4
Journal	Organic Electronics
Volume	24
DOIs	https://doi.org/10.1016/j.orgel.2015.05.018
State	Published - May 26 2015

Bibliographical note

Funding Information:
We thank B.K. Crone and S.A. Crooker for valuable comments. The work at LANL is supported by the Los Alamos LDRD program. S.Y. thanks the financial support by China’s Visiting Scholarship , the Excellent Youth and Middle Age Scientists Fund of Shandong Province (No. BS2012CL025 ) and the Independent Innovation Foundation of Shandong University (No. 2012TS022 ).

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.

Keywords

Current-voltage characteristics
Insulating spacer layer
Organic heterostructure

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10.1016/j.orgel.2015.05.018

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@article{ba15eafa66794c0a8b52b74a913308a4,

title = "Current-voltage characteristics of organic heterostructure devices with insulating spacer layers",

abstract = "The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. We present a device model to describe this behavior, and we discuss relevant experimental data.",

keywords = "Current-voltage characteristics, Insulating spacer layer, Organic heterostructure",

author = "Sun Yin and Wanyi Nie and Mohite, {Aditya D.} and Avadh Saxena and Smith, {Darryl L.} and Ruden, {P. Paul}",

note = "Funding Information: We thank B.K. Crone and S.A. Crooker for valuable comments. The work at LANL is supported by the Los Alamos LDRD program. S.Y. thanks the financial support by China{\textquoteright}s Visiting Scholarship , the Excellent Youth and Middle Age Scientists Fund of Shandong Province (No. BS2012CL025 ) and the Independent Innovation Foundation of Shandong University (No. 2012TS022 ). Publisher Copyright: {\textcopyright} 2015 Elsevier B.V. All rights reserved.",

year = "2015",

month = may,

day = "26",

doi = "10.1016/j.orgel.2015.05.018",

language = "English (US)",

volume = "24",

pages = "26--29",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

}

TY - JOUR

T1 - Current-voltage characteristics of organic heterostructure devices with insulating spacer layers

AU - Yin, Sun

AU - Nie, Wanyi

AU - Mohite, Aditya D.

AU - Saxena, Avadh

AU - Smith, Darryl L.

AU - Ruden, P. Paul

N1 - Funding Information: We thank B.K. Crone and S.A. Crooker for valuable comments. The work at LANL is supported by the Los Alamos LDRD program. S.Y. thanks the financial support by China’s Visiting Scholarship , the Excellent Youth and Middle Age Scientists Fund of Shandong Province (No. BS2012CL025 ) and the Independent Innovation Foundation of Shandong University (No. 2012TS022 ). Publisher Copyright: © 2015 Elsevier B.V. All rights reserved.

PY - 2015/5/26

Y1 - 2015/5/26

N2 - The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. We present a device model to describe this behavior, and we discuss relevant experimental data.

AB - The dark current density in donor/acceptor organic planar heterostructure devices at a given forward voltage bias can either increase or decrease when an insulating spacer layer is added between the donor and acceptor layers. The dominant current flow process in these systems involves the formation and subsequent recombination of interfacial exciplex states. If the exciplex recombination rate limits current flow, an insulating interface layer decreases the dark current. However, if the exciplex formation rate limits the current, an insulating interface layer may increase the dark current. We present a device model to describe this behavior, and we discuss relevant experimental data.

KW - Current-voltage characteristics

KW - Insulating spacer layer

KW - Organic heterostructure

UR - http://www.scopus.com/inward/record.url?scp=84930001307&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930001307&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2015.05.018

DO - 10.1016/j.orgel.2015.05.018

M3 - Article

AN - SCOPUS:84930001307

SN - 1566-1199

VL - 24

SP - 26

EP - 29

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

ER -

Current-voltage characteristics of organic heterostructure devices with insulating spacer layers

Abstract

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