Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

Tao He, Yanfei Wu, Gabriele D'Avino, Elliot Schmidt, Matthias Stolte, Jérôme Cornil, David Beljonne, P. Paul Ruden, Frank Würthner, C. Daniel Frisbie

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

Original languageEnglish (US)
Article number2141
JournalNature communications
Volume9
Issue number1
DOIs
StatePublished - Dec 1 2018

Fingerprint

Electron traps
Semiconductors
n-type semiconductors
Semiconducting organic compounds
organic semiconductors
traps
Electrons
Crystals
crystals
Scanning Probe Microscopy
electrons
trapping
Charge trapping
Microstructure
Carrier mobility
Materials science
Threshold voltage
Microscopic examination
microstructure
Single crystals

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 5

PubMed: MeSH publication types

  • Journal Article
  • Research Support, U.S. Gov't, Non-P.H.S.
  • Research Support, Non-U.S. Gov't

Cite this

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors. / He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P. Paul; Würthner, Frank; Frisbie, C. Daniel.

In: Nature communications, Vol. 9, No. 1, 2141, 01.12.2018.

Research output: Contribution to journalArticle

He, T, Wu, Y, D'Avino, G, Schmidt, E, Stolte, M, Cornil, J, Beljonne, D, Ruden, PP, Würthner, F & Frisbie, CD 2018, 'Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors', Nature communications, vol. 9, no. 1, 2141. https://doi.org/10.1038/s41467-018-04479-z
He, Tao ; Wu, Yanfei ; D'Avino, Gabriele ; Schmidt, Elliot ; Stolte, Matthias ; Cornil, Jérôme ; Beljonne, David ; Ruden, P. Paul ; Würthner, Frank ; Frisbie, C. Daniel. / Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors. In: Nature communications. 2018 ; Vol. 9, No. 1.
@article{8a7306017775437982fe156a2653c8d4,
title = "Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors",
abstract = "Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.",
author = "Tao He and Yanfei Wu and Gabriele D'Avino and Elliot Schmidt and Matthias Stolte and J{\'e}r{\^o}me Cornil and David Beljonne and Ruden, {P. Paul} and Frank W{\"u}rthner and Frisbie, {C. Daniel}",
year = "2018",
month = "12",
day = "1",
doi = "10.1038/s41467-018-04479-z",
language = "English (US)",
volume = "9",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "1",

}

TY - JOUR

T1 - Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

AU - He, Tao

AU - Wu, Yanfei

AU - D'Avino, Gabriele

AU - Schmidt, Elliot

AU - Stolte, Matthias

AU - Cornil, Jérôme

AU - Beljonne, David

AU - Ruden, P. Paul

AU - Würthner, Frank

AU - Frisbie, C. Daniel

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

AB - Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=85047860992&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047860992&partnerID=8YFLogxK

U2 - 10.1038/s41467-018-04479-z

DO - 10.1038/s41467-018-04479-z

M3 - Article

VL - 9

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 1

M1 - 2141

ER -