Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	63rd IEEE International Electron Devices Meeting
Pages	15.7.1-15.7.4
DOIs	https://doi.org/10.1109/IEDM.2017.8268399
State	Published - Dec 2017
Event	2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA Duration: Dec 2 2017 → Dec 6 2017

Conference	2017 IEEE International Electron Devices Meeting (IEDM)
Period	12/2/17 → 12/6/17

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@inproceedings{c50a129b86f147aa9b232b2788cc76b2,

title = "Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit",

author = "Robbins, {Matthew C.} and Koester, {Steven J.}",

year = "2017",

month = dec,

doi = "10.1109/IEDM.2017.8268399",

language = "English (US)",

pages = "15.7.1--15.7.4",

booktitle = "63rd IEEE International Electron Devices Meeting",

note = "2017 IEEE International Electron Devices Meeting (IEDM) ; Conference date: 02-12-2017 Through 06-12-2017",

}

TY - GEN

T1 - Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit

AU - Robbins, Matthew C.

AU - Koester, Steven J.

PY - 2017/12

Y1 - 2017/12

U2 - 10.1109/IEDM.2017.8268399

DO - 10.1109/IEDM.2017.8268399

M3 - Conference contribution

SP - 15.7.1-15.7.4

BT - 63rd IEEE International Electron Devices Meeting

T2 - 2017 IEEE International Electron Devices Meeting (IEDM)

Y2 - 2 December 2017 through 6 December 2017

ER -