Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit

Matthew C. Robbins, Steven J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication63rd IEEE International Electron Devices Meeting
Pages15.7.1-15.7.4
DOIs
StatePublished - Dec 2017
Event2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA
Duration: Dec 2 2017Dec 6 2017

Conference

Conference2017 IEEE International Electron Devices Meeting (IEDM)
Period12/2/1712/6/17

How much support was provided by MRSEC?

  • Partial

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