Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	63rd IEEE International Electron Devices Meeting
Pages	15.7.1-15.7.4
DOIs	https://doi.org/10.1109/IEDM.2017.8268399
State	Published - Dec 2017
Event	2017 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA Duration: Dec 2 2017 → Dec 6 2017

Conference	2017 IEEE International Electron Devices Meeting (IEDM)
Period	12/2/17 → 12/6/17

MRSEC Support

University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project
MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C. (Coordinator), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Goldman, A. M. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Koester, S. J. (Senior Investigator), He, T. (Researcher), Jeong, J. S. (Researcher), Koirala, S. (Researcher), Paul, A. (Researcher), Thoutam, L. R. (Researcher) & Yu, G. (Researcher)
11/1/14 → 10/31/20
Project: Research project

@inproceedings{c50a129b86f147aa9b232b2788cc76b2,

title = "Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit",

author = "Robbins, {Matthew C.} and Koester, {Steven J.}",

year = "2017",

month = dec,

doi = "10.1109/IEDM.2017.8268399",

language = "English (US)",

pages = "15.7.1--15.7.4",

booktitle = "63rd IEEE International Electron Devices Meeting",

note = "2017 IEEE International Electron Devices Meeting (IEDM) ; Conference date: 02-12-2017 Through 06-12-2017",

}

TY - GEN

T1 - Crystal-oriented black phosphorus TFETs with strong band-to-band-tunneling anisotropy and subthreshold slope nearing the thermionic limit

AU - Robbins, Matthew C.

AU - Koester, Steven J.

PY - 2017/12

Y1 - 2017/12

U2 - 10.1109/IEDM.2017.8268399

DO - 10.1109/IEDM.2017.8268399

M3 - Conference contribution

SP - 15.7.1-15.7.4

BT - 63rd IEEE International Electron Devices Meeting

T2 - 2017 IEEE International Electron Devices Meeting (IEDM)

Y2 - 2 December 2017 through 6 December 2017

ER -