Skip to main navigation
Skip to search
Skip to main content
Experts@Minnesota Home
Home
Profiles
Research units
University Assets
Projects and Grants
Research output
Datasets
Press/Media
Activities
Fellowships, Honors, and Prizes
Impacts
Search by expertise, name or affiliation
CRYOGENIC BEHAVIOR OF SCALED CMOS DEVICES.
J. W. Schrankler
, J. S.T. Huang
, R. S.L. Lutze
, H. P. Vyas
, G. D. Kirchner
Technology Commercialization
Research output
:
Contribution to journal
›
Conference article
›
peer-review
22
Scopus citations
Overview
Fingerprint
Fingerprint
Dive into the research topics of 'CRYOGENIC BEHAVIOR OF SCALED CMOS DEVICES.'. Together they form a unique fingerprint.
Sort by
Weight
Alphabetically
Keyphrases
CMOS Devices
100%
Scaled CMOS
100%
Channel Length
66%
Velocity Saturation
66%
Liquid Nitrogen Temperature
66%
Propagation Delay
66%
Low Temperature
33%
Performance Enhancement
33%
Supply Voltage
33%
Analytical Model
33%
Switching Speed
33%
Low-field Mobility
33%
Saturation Effect
33%
Saturation Velocity
33%
Device Switching
33%
Delay Chain
33%
Engineering
Channel Length
100%
Cmos Device
100%
Propagation Delay
100%
Low-Temperature
50%
Switching Speed
50%
Saturation Effect
50%
Operation Temperature
50%
Supply Voltage
50%
Analytical Model
50%