CRYOGENIC BEHAVIOR OF SCALED CMOS DEVICES.

J. W. Schrankler, J. S.T. Huang, R. S.L. Lutze, H. P. Vyas, G. D. Kirchner

Research output: Contribution to journalConference article

19 Scopus citations

Abstract

Performance enhancements of scaled CMOS devices are studied at room and liquid nitrogen temperatures. The extent of propagation delay improvement at low temperature is limited by velocity saturation as device channel lengths are decreased and/or the supply voltage is increased. Liquid nitrogen temperature operation increases low field mobility by a factor of 4 while the saturation velocity increases only 30%. An analytical model is developed for device switching speed which includes velocity saturation effects. The model accurately predicts measured propagation delay on scaled CMOS delay chains with channel lengths down to 0. 5 mu m.

Original languageEnglish (US)
Pages (from-to)598-600
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1984

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    Schrankler, J. W., Huang, J. S. T., Lutze, R. S. L., Vyas, H. P., & Kirchner, G. D. (1984). CRYOGENIC BEHAVIOR OF SCALED CMOS DEVICES. Technical Digest - International Electron Devices Meeting, 598-600. https://doi.org/10.1109/iedm.1984.190792