Crossing the Coulomb gap in semiconducting polymers

C. Daniel Frisbie

doi:10.1038/s41563-024-01965-2

Crossing the Coulomb gap in semiconducting polymers

C. Daniel Frisbie

Research output: Contribution to journal › Comment/debate › peer-review

2 Scopus citations

Abstract

A tandem transistor allowing for both electrochemical gating and field-effect gating is designed to achieve unprecedented doping and correlated physics in polymer semiconductors.

Original language	English (US)
Pages (from-to)	1615-1617
Number of pages	3
Journal	Nature Materials
Volume	23
Issue number	12
DOIs	https://doi.org/10.1038/s41563-024-01965-2
State	Published - Dec 2024
Externally published	Yes

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Publisher Copyright:
© Springer Nature Limited 2024.

PubMed: MeSH publication types

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10.1038/s41563-024-01965-2

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DO - 10.1038/s41563-024-01965-2

M3 - Comment/debate

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JO - Nature Materials

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Crossing the Coulomb gap in semiconducting polymers

Abstract

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