Engineering & Materials Science
Epitaxial growth
98%
Chemical vapor deposition
81%
Semiconductor materials
62%
Hot Temperature
33%
Doping (additives)
31%
Valence bands
25%
Rapid thermal processing
22%
Hydrogen
22%
Silicon
22%
Carbon
21%
Semiconductor doping
21%
Arsenic
20%
Substrates
19%
Germanium
18%
Heterojunction bipolar transistors
16%
Optoelectronic devices
16%
Boron
15%
Field effect transistors
14%
Activation energy
14%
Annealing
13%
Demonstrations
11%
Gases
8%
Temperature
5%
Chemical Compounds
Germane
100%
Semiconductor
53%
Strain
49%
Growth Activation
41%
Arsine
30%
Valence Band
25%
Hydrogen
23%
Implant
23%
Carbon Atom
21%
Optoelectronics
21%
Doping Material
20%
Annealing
18%
Compound Mobility
17%
Reaction Activation Energy
16%
Gas
12%
Purity
11%
Liquid Film
11%
Surface
7%
Application
7%