Coupling of channel conductance and gate-to-channel capacitance in electric double layer transistors

Feilong Liu; Wei Xie; Sha Shi; C. Daniel Frisbie; P. Paul Ruden

doi:10.1063/1.4829139

Coupling of channel conductance and gate-to-channel capacitance in electric double layer transistors

Feilong Liu, Wei Xie, Sha Shi, C. Daniel Frisbie, P. Paul Ruden

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Electric double layer transistors (EDLTs) have unique impedance properties. As the transport of charge in the semiconductor and of ions in the electrolyte involve different time scales, the gate-to-channel equivalent capacitance changes dramatically with frequency. An important feature is the coupling between the capacitance and the channel conductance in the frequency range of interest due to the relatively large time constant of the charging process. This paper presents a systematic study of these EDLT properties. An equivalent-circuit model is proposed that provides reasonable physical explanations and shows good agreement with the experimental results.

Original language	English (US)
Article number	193304
Journal	Applied Physics Letters
Volume	103
Issue number	19
DOIs	https://doi.org/10.1063/1.4829139
State	Published - Nov 4 2013

Bibliographical note

Funding Information:
This work was supported by the MRSEC program of the National Science Foundation at University of Minnesota under Award No. DMR-0819885 and a University of Minnesota Doctoral Dissertation Fellowship. Access to the facilities of the Minnesota Supercomputing Institute is gratefully acknowledged.

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abstract = "Electric double layer transistors (EDLTs) have unique impedance properties. As the transport of charge in the semiconductor and of ions in the electrolyte involve different time scales, the gate-to-channel equivalent capacitance changes dramatically with frequency. An important feature is the coupling between the capacitance and the channel conductance in the frequency range of interest due to the relatively large time constant of the charging process. This paper presents a systematic study of these EDLT properties. An equivalent-circuit model is proposed that provides reasonable physical explanations and shows good agreement with the experimental results.",

author = "Feilong Liu and Wei Xie and Sha Shi and {Daniel Frisbie}, C. and {Paul Ruden}, P.",

note = "Funding Information: This work was supported by the MRSEC program of the National Science Foundation at University of Minnesota under Award No. DMR-0819885 and a University of Minnesota Doctoral Dissertation Fellowship. Access to the facilities of the Minnesota Supercomputing Institute is gratefully acknowledged. ",

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AU - Xie, Wei

AU - Shi, Sha

AU - Daniel Frisbie, C.

AU - Paul Ruden, P.

N1 - Funding Information: This work was supported by the MRSEC program of the National Science Foundation at University of Minnesota under Award No. DMR-0819885 and a University of Minnesota Doctoral Dissertation Fellowship. Access to the facilities of the Minnesota Supercomputing Institute is gratefully acknowledged.

PY - 2013/11/4

Y1 - 2013/11/4

N2 - Electric double layer transistors (EDLTs) have unique impedance properties. As the transport of charge in the semiconductor and of ions in the electrolyte involve different time scales, the gate-to-channel equivalent capacitance changes dramatically with frequency. An important feature is the coupling between the capacitance and the channel conductance in the frequency range of interest due to the relatively large time constant of the charging process. This paper presents a systematic study of these EDLT properties. An equivalent-circuit model is proposed that provides reasonable physical explanations and shows good agreement with the experimental results.

AB - Electric double layer transistors (EDLTs) have unique impedance properties. As the transport of charge in the semiconductor and of ions in the electrolyte involve different time scales, the gate-to-channel equivalent capacitance changes dramatically with frequency. An important feature is the coupling between the capacitance and the channel conductance in the frequency range of interest due to the relatively large time constant of the charging process. This paper presents a systematic study of these EDLT properties. An equivalent-circuit model is proposed that provides reasonable physical explanations and shows good agreement with the experimental results.

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Coupling of channel conductance and gate-to-channel capacitance in electric double layer transistors

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