Coulomb gap in a doped semiconductor near the metal-insulator transition: Tunneling experiment and scaling ansatz

Mark Lee, J. G. Massey, V. L. Nguyen, B. I. Shklovskii

Research output: Contribution to journalArticle

66 Scopus citations

Abstract

Electron tunneling experiments are used to probe Coulomb correlation effects in the single-particle density of states (DOS) of boron-doped silicon crystals near the critical density nc of the metal-insulator transition (MIT). At low energies (ε<0.5 meV), a DOS measurement distinguishes between insulating and metallic samples with densities 10 to 15 % on either side of nc. However, at higher energies (1meV<ε<50 meV) the DOS of both insulators and metals show a common behavior, increasing with energy as εm where m is roughly 0.5. The observed characteristics of the DOS can be understood using a classical treatment of Coulomb interactions combined with a phenomenological scaling ansatz to describe the length-scale dependence of the dielectric constant as the MIT is approached from the insulating side.

Original languageEnglish (US)
Pages (from-to)1582-1591
Number of pages10
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume60
Issue number3
DOIs
StatePublished - 1999

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