Corrigendum to “The engulfment of a precipitated particle in a saturated melt during solidification” [J. Crystal Growth 577 (2022) 126400] (Journal of Crystal Growth (2022) 577, (S0022024821003754), (10.1016/j.jcrysgro.2021.126400))

A rigorous, finite-element model is employed to study the engulfment of a precipitated solid particle during solidification in a saturated melt, in which solute segregation, compositional effects on melting temperature, and reaction of the solute with the particle occur. The case of a silicon carbide (SiC) particle approaching a solid-liquid interface in a silicon melt supersaturated with carbon is specifically considered. Critical engulfment velocities are computed for particles with different surface reaction rates, as characterized by the Damköhler number, a dimensionless ratio of reaction to diffusion. Consistent with prior studies, an inert particle is predicted to be more likely to be engulfed when solute effects are present. However, a particle with fast surface reaction is less likely to be engulfed than in a system without solute effects, which is likely relevant for SiC particles during silicon crystal growth. Most interestingly, a particle for which the surface reaction is characterized by a Damköhler number of order unity is predicted to never be engulfed.