CuInS2 (CIS) thin films were prepared by sulfurization of In/Cu stacked precursor films. Prior to sulfurization the stacked metallic precursors were subjected to the soft annealing in Ar atmosphere at different time (10, 30, and 60 min) and temperature (100 C and 300 C). The effect of soft annealing condition on the structural, morphological and optical properties of CIS films was investigated. X-ray diffraction, Raman, and X-ray photoelectron spectroscopy studies showed that the sulfurized thin films exhibited a CIS tetragonal structure with minor secondary phases such as Cu2-xS and CuIn 5S8. The secondary phases were minimized by introducing soft annealed process in the CIS thin films. Void free CIS microstructures have been observed for soft annealed CIS films. The band gap energy of CIS films were increased from 1.37 to 1.5 eV depending on the soft annealing conditions.
Bibliographical noteFunding Information:
This work is supported by the Human Resources Development of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant funded by the Korea government Ministry of Knowledge Economy (No. 20124010203180 ) and partially supported by a Grant from the Fundamental R&D program for Core Technology of Materials funded by the Ministry of Knowledge Economy ( 10037233 ).
- A1. High resolution X-ray diffraction
- B1. Inorganic compounds
- B2. Semiconducting materials
- B3. Solar cells