Correction: Controlled p-type substitutional doping in large-area monolayer WSe2 crystals grown by chemical vapor deposition (Nanoscale (2018) 10 (21374–21385) DOI:  10.1039/C8NR07070A)

Sushil Kumar Pandey; Hussain Alsalman; Javad G. Azadani; Nezhueyotl Izquierdo; Tony Low; Stephen A. Campbell

doi:10.1039/c8nr90273a

Correction: Controlled p-type substitutional doping in large-area monolayer WSe₂ crystals grown by chemical vapor deposition (Nanoscale (2018) 10 (21374–21385) DOI: 10.1039/C8NR07070A)

Sushil Kumar Pandey, Hussain Alsalman, Javad G. Azadani, Nezhueyotl Izquierdo, Tony Low, Stephen A. Campbell

Electrical and Computer Engineering

Research output: Contribution to journal › Comment/debate › peer-review

Abstract

The authors have noticed that affiliation b for Hussain Alsalman was missing in the original article. A corrected affiliation list has therefore been provided for this correction. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Original language	English (US)
Pages (from-to)	365
Number of pages	1
Journal	Nanoscale
Volume	11
Issue number	1
DOIs	https://doi.org/10.1039/c8nr90273a
State	Published - Jan 7 2019

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry.

PubMed: MeSH publication types

Published Erratum
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10.1039/c8nr90273a

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Correction: Controlled p-type substitutional doping in large-area monolayer WSe₂ crystals grown by chemical vapor deposition (Nanoscale (2018) 10 (21374–21385) DOI: 10.1039/C8NR07070A). / Pandey, Sushil Kumar; Alsalman, Hussain; Azadani, Javad G. et al.
In: Nanoscale, Vol. 11, No. 1, 07.01.2019, p. 365.

Research output: Contribution to journal › Comment/debate › peer-review

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