Controlling transistor threshold voltages using molecular dipoles

Smitha Vasudevan, Neeti Kapur, Tao He, Matthew Neurock, James M. Tour, Avik W. Ghosh

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Abstract

We develop a theoretical model for how organic molecules can control the electronic and transport properties of an underlying transistor channel to whose surface they are chemically bonded. The influence arises from a combination of long-ranged dipolar electrostatics due to the molecular head groups as well as short-ranged charge transfer and interfacial dipole driven by equilibrium band alignment between the molecular backbone and the reconstructed semiconductor surface atoms.

Original languageEnglish (US)
Article number093703
JournalJournal of Applied Physics
Volume105
Issue number9
DOIs
StatePublished - Jun 22 2009

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    Vasudevan, S., Kapur, N., He, T., Neurock, M., Tour, J. M., & Ghosh, A. W. (2009). Controlling transistor threshold voltages using molecular dipoles. Journal of Applied Physics, 105(9), [093703]. https://doi.org/10.1063/1.3091290