Controlling film growth with selective excitation: Chemical vapor deposition growth of silicon

Biao Wu, Philip I. Cohen, L. C. Feldman, Zhenyu Zhang

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

A thin film growth control method called selectively enhanced adatom diffusion (SEAD) was proposed, which is used to promote the step-flow growth. The geometric frequency difference at a surface was used in an infrared laser to selectively excite only blocking adatoms at steps. It was stated that key to the method is to selectively excite blocking adatoms and enhance their mobility by properly tuning the laser frequency. The methods feasability for the chemical vapor desposition (CVD) growth of silicon was also discussed.

Original languageEnglish (US)
Pages (from-to)2175-2177
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number12
DOIs
StatePublished - Mar 22 2004

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