Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications

Jingkai Qin, Gang Qiu, Jie Jian, Hong Zhou, Lingming Yang, Adam Charnas, Dmitry Y. Zemlyanov, Cheng Yan Xu, Xianfan Xu, Wenzhuo Wu, Haiyan Wang, Peide D. Ye

Research output: Contribution to journalArticlepeer-review

183 Scopus citations


Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire forms due to its anisotropic atomic structure, which has largely hindered the exploration of its potential applications. In this work, using a physical vapor deposition method, we have demonstrated the synthesis of large-size, high-quality 2D selenium nanosheets, the minimum thickness of which could be as thin as 5 nm. The Se nanosheet exhibits a strong in-plane anisotropic property, which is determined by angle-resolved Raman spectroscopy. Back-gating field-effect transistors based on a Se nanosheet exhibit p-type transport behaviors with on-state current density around 20 mA/mm at Vds = 3 V. Four-terminal field-effect devices are also fabricated to evaluate the intrinsic hole mobility of the selenium nanosheet, and the value is determined to be 0.26 cm2 V-1 s-1 at 300 K. The selenium nanosheet phototransistors show an excellent photoresponsivity of up to 263 A/W, with a rise time of 0.1 s and fall time of 0.12 s. These results suggest that crystal selenium as a 2D form of a 1D van der Waals solid opens up the possibility to explore device applications.

Original languageEnglish (US)
Pages (from-to)10222-10229
Number of pages8
JournalACS nano
Issue number10
StatePublished - Oct 24 2017
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2017 American Chemical Society.


  • 1D crystal structure
  • 2D nanosheet
  • electrical transport
  • photoresponse
  • selenium


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