Controlled electrochemical deposition of magnetostrictive Fe 1 - XGa x alloys

K. Sai Madhukar Reddy, Eliot C. Estrine, Dong Ha Lim, William H. Smyrl, Bethanie J.H. Stadler

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


In this study, using steady-state electrochemistry at a rotating disk electrode, a deposition mechanism for giant magnetostrictive Fe 1 - xGa x alloys is proposed in which the formation of an adsorbed monovalent [Fe(I)] ads intermediate is determined to be the rate-determining step. In subsequent steps, this intermediate either gets reduced to iron or catalyzes the reduction of gallium by forming an adsorbed [Ga(III)-Fe(I)] ads intermediate. In line with the proposed mechanism, it was experimentally shown that the differences in the mass-transport rates of Fe(II) species determined the thin film composition. Therefore, this study has made possible a controllable and reproducible deposition of Fe 1 - xGa x thin films with compositions in the entire range of interest (15%-30% Ga). As-grown Fe 80Ga 20 thin films were found to have magnetostriction constants of ~ 112 ppm.

Original languageEnglish (US)
Pages (from-to)127-130
Number of pages4
JournalElectrochemistry Communications
Issue number1
StatePublished - 2012

Bibliographical note

Funding Information:
This work was supported by the MRSEC Program of the National Science Foundation under Award Number DMR-0819885 and the U.S. Office of Naval Research (Dr. Jan Lindberg) under ONR N000140610530 . Part of the work was done in the UMN Nanofabrication Center and Characterization Facilities under the NSF NNIN Program. We also thank Prof Bill Robbins for measurements of magnetostriction.


  • Deposition mechanism
  • Galfenol
  • Gallium
  • Giant magnetostrictive alloy
  • Iron
  • Rotating disk electrode


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