TY - JOUR
T1 - Continuous c-oriented AlPO4-5 films by tertiary growth
AU - Karanikolos, Georgios N.
AU - Wydra, James W.
AU - Stoeger, Jared A.
AU - García, Hermenegildo
AU - Corma, Avelino
AU - Tsapatsis, Michael
PY - 2007/2/20
Y1 - 2007/2/20
N2 - c-Oriented AlPO4-5 films were synthesized by seeded growth on silicon substrates. Secondary hydrothermal treatment of the seeded substrates under conditions that favor c-out-of-plane growth yielded non-intergrown, highly oriented columnar crystals with a length of 7 μm. Modifying the conditions so that in-plane growth is favored and executing yet another ("tertiary") growth, the crystals obtained by secondary treatment were grown in-plane, along the a-, b-directions, filling the gaps between the columnar grains and yielding well-intergrown, highly oriented, continuous AlPO4-5 films. The oriented films obtained by the technique presented here can be potentially useful for separations and catalysis as well as electronic and electrochemical applications.
AB - c-Oriented AlPO4-5 films were synthesized by seeded growth on silicon substrates. Secondary hydrothermal treatment of the seeded substrates under conditions that favor c-out-of-plane growth yielded non-intergrown, highly oriented columnar crystals with a length of 7 μm. Modifying the conditions so that in-plane growth is favored and executing yet another ("tertiary") growth, the crystals obtained by secondary treatment were grown in-plane, along the a-, b-directions, filling the gaps between the columnar grains and yielding well-intergrown, highly oriented, continuous AlPO4-5 films. The oriented films obtained by the technique presented here can be potentially useful for separations and catalysis as well as electronic and electrochemical applications.
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U2 - 10.1021/cm0622295
DO - 10.1021/cm0622295
M3 - Article
AN - SCOPUS:33947188140
SN - 0897-4756
VL - 19
SP - 792
EP - 797
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 4
ER -