Conduction mechanisms in doped mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

L. R. Wienkes; C. Blackwell; T. Hutchinson; James Kakalios

doi:10.1063/1.4811536

Conduction mechanisms in doped mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

L. R. Wienkes, C. Blackwell, T. Hutchinson, James Kakalios

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

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Abstract

A detailed description of the microscopic nature of electronic conduction in mixed-phase silicon thin films near the amorphous/nanocrystalline transition is presented. A conduction model utilizing both the conductivity and the reduced activation energy data, involving the parallel contributions of three distinct conduction mechanisms, is shown to describe the data to a high accuracy, providing a clear link between measurement and theory in these complex materials.

Original language	English (US)
Article number	233707
Journal	Journal of Applied Physics
Volume	113
Issue number	23
DOIs	https://doi.org/10.1063/1.4811536
State	Published - Jun 21 2013

Bibliographical note

Funding Information:
We gratefully acknowledge fruitful discussions with Boris Shklovskii and David Emin. This work was partially supported by NSF grant DMR-0705675, the NINN Characterization Facility, the Nanofabrication Center, an Xcel Energy grant under RDF Contract #RD3-25, NREL Sub-Contract XEA-9-99012-01, and the University of Minnesota. L.R.W. acknowledges support from a Doctoral Dissertation Fellowship provided by the University of Minnesota and T.H. acknowledges support from NSF-0851820.

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abstract = "A detailed description of the microscopic nature of electronic conduction in mixed-phase silicon thin films near the amorphous/nanocrystalline transition is presented. A conduction model utilizing both the conductivity and the reduced activation energy data, involving the parallel contributions of three distinct conduction mechanisms, is shown to describe the data to a high accuracy, providing a clear link between measurement and theory in these complex materials.",

author = "Wienkes, {L. R.} and C. Blackwell and T. Hutchinson and James Kakalios",

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AU - Blackwell, C.

AU - Hutchinson, T.

AU - Kakalios, James

N1 - Funding Information: We gratefully acknowledge fruitful discussions with Boris Shklovskii and David Emin. This work was partially supported by NSF grant DMR-0705675, the NINN Characterization Facility, the Nanofabrication Center, an Xcel Energy grant under RDF Contract #RD3-25, NREL Sub-Contract XEA-9-99012-01, and the University of Minnesota. L.R.W. acknowledges support from a Doctoral Dissertation Fellowship provided by the University of Minnesota and T.H. acknowledges support from NSF-0851820.

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N2 - A detailed description of the microscopic nature of electronic conduction in mixed-phase silicon thin films near the amorphous/nanocrystalline transition is presented. A conduction model utilizing both the conductivity and the reduced activation energy data, involving the parallel contributions of three distinct conduction mechanisms, is shown to describe the data to a high accuracy, providing a clear link between measurement and theory in these complex materials.

AB - A detailed description of the microscopic nature of electronic conduction in mixed-phase silicon thin films near the amorphous/nanocrystalline transition is presented. A conduction model utilizing both the conductivity and the reduced activation energy data, involving the parallel contributions of three distinct conduction mechanisms, is shown to describe the data to a high accuracy, providing a clear link between measurement and theory in these complex materials.

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Conduction mechanisms in doped mixed-phase hydrogenated amorphous/nanocrystalline silicon thin films

Abstract

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