Abstract
The power spectra of the 1/f noise in n-type-doped hydrogenated amorphous silicon (a-Si:H) are themselves time dependent. The noise power changes both in magnitude and as a function of frequency, reflecting a modulation of the properties of the fluctuators responsible for the current noise. Slow variations of the noise are strongly correlated over a broad range of frequencies. Spectral analysis of these noise power fluctuations, termed second spectra, also shows an approximate 1/f spectral slope, that is, the 1/f noise has 1/f noise. These results indicate that highly cooperative interactions exist between the fluctuators.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1097-1100 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 69 |
| Issue number | 7 |
| DOIs | |
| State | Published - 1992 |
Bibliographical note
Copyright:Copyright 2015 Elsevier B.V., All rights reserved.
Fingerprint
Dive into the research topics of 'Conductance-noise power fluctuations in hydrogenated amorphous silicon'. Together they form a unique fingerprint.Cite this
- APA
- Standard
- Harvard
- Vancouver
- Author
- BIBTEX
- RIS