Conductance-noise power fluctuations in hydrogenated amorphous silicon

C. E. Parman, N. E. Israeloff, J. Kakalios

Research output: Contribution to journalArticlepeer-review

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The power spectra of the 1/f noise in n-type-doped hydrogenated amorphous silicon (a-Si:H) are themselves time dependent. The noise power changes both in magnitude and as a function of frequency, reflecting a modulation of the properties of the fluctuators responsible for the current noise. Slow variations of the noise are strongly correlated over a broad range of frequencies. Spectral analysis of these noise power fluctuations, termed second spectra, also shows an approximate 1/f spectral slope, that is, the 1/f noise has 1/f noise. These results indicate that highly cooperative interactions exist between the fluctuators.

Original languageEnglish (US)
Pages (from-to)1097-1100
Number of pages4
JournalPhysical review letters
Issue number7
StatePublished - 1992

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