Conductance fluctuations in amorphous silicon nanoparticles

T. J. Belich, Z. Shen, C. Blackwell, S. A. Campbell, J. Kakalios

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Hydrogenated amorphous silicon nanoparticles with an average diameter of 150 nm have been synthesized by high-density plasma chemical vapor deposition. The particles are deposited onto a conducting substrate and are then surrounded by an insulating matrix, electrically isolating the particles. Electrical contact is made to the top of each nanoparticle; the current-voltage characteristics of the nanoparticles indicate that transport is space-charge limited through the a-Si:H. The spectral density of the current fluctuations in the a-Si:H nanoparticles is well described by a 1/f frequency dependence for frequency f. However, the octave separation dependence of the correlation coefficients of the noise power for the nanoparticles are very well described by an ensemble of fluctuators whose amplitudes are independently modulated in parallel, rather than the serial kinetics typically observed in bulk a-Si:H.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsR. Collins, P.C. Taylor, M. Kondo, R. Carius, R. Biswas
Pages337-342
Number of pages6
Volume862
StatePublished - 2005
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: Mar 28 2005Apr 1 2005

Other

Other2005 Materials Research Society Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/28/054/1/05

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    Belich, T. J., Shen, Z., Blackwell, C., Campbell, S. A., & Kakalios, J. (2005). Conductance fluctuations in amorphous silicon nanoparticles. In R. Collins, P. C. Taylor, M. Kondo, R. Carius, & R. Biswas (Eds.), Materials Research Society Symposium Proceedings (Vol. 862, pp. 337-342). [A4.1]