Conductance asymmetry of graphene p-n junction

Tony Low, Seokmin Hong, Joerg Appenzeller, Supriyo Datta, Mark S. Lundstrom

Research output: Contribution to journalArticlepeer-review

116 Scopus citations


We use the nonequilibrium Green function method in the ballistic limit to provide a quantitative description of the conductance of graphene p-n junctions - an important building block for graphene electronics devices. In this paper, recent experiments on graphene junctions are explained by a ballistic transport model, but only if the finite junction transition width Dw is accounted for. In particular, the experimentally observed anomalous increase in the resistance asymmetry between n-n and n-p junctions under low source/drain charge density conditions is also quantitatively captured by our model. In light of the requirement for sharp junctions in applications such as electron focusing, we also examine the p-n junction conductance in the regime where Dw is small and find that wave-function mismatch (so-called pseudospin) plays a major role in sharp p-n junctions.

Original languageEnglish (US)
Pages (from-to)1292-1299
Number of pages8
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - 2009


  • Conductance asymmetry
  • Graphene
  • Nonequilibrium green function
  • P-n junction


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