Computer simulation of misfit dislocation contrast at an FeAl/GaAs interface

J. E. Angelo, W. W. Gerberich

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Computer simulations are used to produce the misfit dislocation contrast observed in a transmission electron microscope (TEM). The material of study is FeAl, deposited by molecular beam epitaxy, on A1As/GaAs(001). The difference, or misfit, in lattice constants of the FeAl and GaAs is accommodated by misfit dislocations at the interface. The simulations allow for determining the type, i.e., the Burgers vector, of the misfit dislocations. These are shown to have 〈100〉 line directions with 〈010〉 Burgers vectors.

Original languageEnglish (US)
Pages (from-to)313-320
Number of pages8
Issue number3
StatePublished - Mar 1992

Bibliographical note

Funding Information:
This work was supported by the Mmnesota Supercomputer Institute and the Center for Interracial Engineering at the Unwersity of Minnesota under Grant no NSF/CDR-8721551 We thank Professor P I Cohen and A M Wowchak, of the Dept of Electrical Engineering at the Unw of Minnesota, for the growth of the film, and Dr P Humble, of the CSIRO Division of Materials Science and Technology, Clayton, Aus-traha, for help in the derwatlon of eq (3)


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