Abstract
This chapter contains sections titled: Introduction Present state of bulk crystal growth modelling Bulk crystal growth processes Transport modelling in bulk crystal growth Computer-aided analysis Modelling examples Summary and outlook Acknowledgments References.
| Original language | English (US) |
|---|---|
| Title of host publication | Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials |
| Publisher | Wiley |
| Pages | 73-119 |
| Number of pages | 47 |
| ISBN (Electronic) | 9780470012086 |
| ISBN (Print) | 0470851422, 9780470851425 |
| DOIs | |
| State | Published - Jul 14 2010 |
Bibliographical note
Publisher Copyright:© 2005 John Wiley & Sons Ltd. All Rights Reserved.
Keywords
- Bridgman growth of CZT - axisymmetric analysis by accelerated crucible rotation technique (ACRT)
- Bulk crystal growth modelling and present state - computer-aided bulk crystal growth analysis
- Bulk crystal growth processes - solution growth, confined growth, meniscus-defined growth methods
- Computer modelling of bulk crystal growth - difficult industrial processes to model
- Computer-aided numerical analysis of crystal-growth modelling and discretizing equations
- Deforming grids and arbitrary Lagrangian-Eulerian (ALE) methods - solving time-dependent moving boundary problems in fluid mechanics
- Governing equations, accurate and rigorous transport account
- Modelling examples, crystal-growth modelling and low-cost silicon by ribbon-to-ribbon (RTR) process
- Numerical interface representation - by fixed-grid and deforming-grid methods
- Transport modelling in bulk crystal growth