Computational modeling of homogeneous nucleation and particle growth during chemical vapor deposition of silicon films from silane plasmas

S. Warthesen, U. Bhandarkar, S. Girshick, U. Kortshagen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have been developing a model to study the nucleation and growth of particles in silane plasmas. Presently we are experimenting with parameters that could potentially be important. It has been found that an increase in the heavy species gas temperature leads to a delay in the nucleation of particles in low pressure silane plasmas. This effect could be useful in tailoring processes for the manufacture of new materials such as polymorphous silicon. We have made an effort to study this effect using a plasma chemistry model. The model includes gas temperature dependent electron attachment and vibrational relaxation of excited species with a view to study their importance in relation to the gas temperature. Preliminary simulation results predict that these two processes do not contribute substantially to slowing the nucleation process when the gas temperature is increased. Extra efforts must be made to study this potentially important effect.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsJ.D. Cohen, J.R. Abelson, H Matsumura, J Robertson
Pages31-36
Number of pages6
Volume715
StatePublished - 2002
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: Apr 2 2002Apr 5 2002

Other

OtherAmorphous and Heterogeneous Silicon Films 2002
CountryUnited States
CitySan Francisco, CA
Period4/2/024/5/02

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