We present and thoroughly compare band-structures computed with density functional theory, tight-binding, k·p and non-parabolic effective mass models. Parameter sets for the non-parabolic Γ, the L and X valleys and intervalley bandgaps are extracted for bulk InAs, GaAs and InGaAs. We then consider quantum-wells with thickness ranging from 3 nm to 10 nm and the bandgap dependence on film thickness is compared with experiments for In0.53Ga0.47As quantum-wells. The impact of the band-structure on the drain current of nanoscale MOSFETs is simulated with ballistic transport models, the results provide a rigorous assessment of III-V semiconductor band structure calculation methods and calibrated band parameters for device simulations.
Bibliographical noteFunding Information:
The research leading to these results has received funding from the European Commission’s Seventh Framework Programme (FP7/2007–2013) under Grant Agreement III–V-MOS Project No. 619326 via the IUNET Consortium. We would like to acknowledge the reviewers of the EU project III–V-MOS for suggesting us to compare the different models in terms of calculation times.
© 2015 The Authors.
- III-V semiconductors
- Non-parabolic effective mass models
- Ultra-Thin Body MOSFET
- k · p