Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions

Yanfeng Jiang, Qing An Huang

Research output: Contribution to journalConference articlepeer-review

Abstract

In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes' activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.

Original languageEnglish (US)
Pages (from-to)67-72
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4601
DOIs
StatePublished - Dec 1 2001
EventMicromachining and Microfabrication Process Technology and Devices - Nanjing, China
Duration: Nov 7 2001Nov 9 2001

Keywords

  • Anisotropic etching
  • Roughness
  • Surface activation energy

Fingerprint Dive into the research topics of 'Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions'. Together they form a unique fingerprint.

Cite this