Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions

Yanfeng Jiang; Qing An Huang

doi:10.1117/12.444695

Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions

Yanfeng Jiang, Qing An Huang

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes' activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.

Original language	English (US)
Pages (from-to)	67-72
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4601
DOIs	https://doi.org/10.1117/12.444695
State	Published - Dec 1 2001
Event	Micromachining and Microfabrication Process Technology and Devices - Nanjing, China Duration: Nov 7 2001 → Nov 9 2001

Keywords

Anisotropic etching
Roughness
Surface activation energy

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10.1117/12.444695

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title = "Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions",

abstract = "In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes' activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.",

keywords = "Anisotropic etching, Roughness, Surface activation energy",

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AU - Jiang, Yanfeng

AU - Huang, Qing An

PY - 2001/12/1

Y1 - 2001/12/1

N2 - In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes' activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.

AB - In this article, the roughness mechanism of silicon after etching in aqueous potassium hydroxide solutions is proposed. There should exist difference between roughness mechanism and anisotropic mechanism. A parameter just being analog to the surface activation energy is proposed for etching solution. Combining this parameter and the three main crystal planes' activation energy, the roughness can be estimated. So, authors believe that it is the surface activation energy that accounts for the surface roughness.

KW - Anisotropic etching

KW - Roughness

KW - Surface activation energy

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M3 - Conference article

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JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Micromachining and Microfabrication Process Technology and Devices

Y2 - 7 November 2001 through 9 November 2001

ER -

Comparison of the silicon three main crystal planes' surface roughness after etching in aqueous potassium hydroxide solutions

Abstract

Keywords

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