Comparison of spin injection and transport in organic and inorganic semiconductors

P. P. Ruden, D. L. Smith, J. D. Albrecht

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a theoretical model to describe spin transport in a structure consisting of a ferromagnetic metal injector, a thin (usually undoped) semiconductor layer, and a ferromagnetic metal collector. In thermal equilibrium the magnetic contacts are spin-polarized whereas the semiconductor is unpolarized. Due to the large ratio of the metal to semiconductor conductivities, the semiconductor needs to be driven far out of local thermal equilibrium to achieve efficient injection of spin-polarized electrons. This requires a barrier to injection that may be due either to a large Schottky barrier or to an insulating tunnel barrier. Since carrier mobilities (and other relevant parameters) in inorganic and organic semiconductors differ by orders of magnitude, the conditions for achieving a state far from equilibrium at the injecting contact are quite different for the two types of materials.

Original languageEnglish (US)
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1377-1378
Number of pages2
DOIs
StatePublished - Jun 30 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: Jul 26 2004Jul 30 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period7/26/047/30/04

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  • Cite this

    Ruden, P. P., Smith, D. L., & Albrecht, J. D. (2005). Comparison of spin injection and transport in organic and inorganic semiconductors. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1377-1378). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994626