Comparison of Single- and Dual-Gate FET Frequency Doublers

A. Gopinath, Alwyn J. Seeds, J. B. Rankin

Research output: Contribution to journalArticlepeer-review

Abstract

The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device.

Original languageEnglish (US)
Pages (from-to)919-920
Number of pages2
JournalIEEE Transactions on Microwave Theory and Techniques
Volume30
Issue number6
DOIs
StatePublished - Jun 1982

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