Comparison of Single- and Dual-Gate FET Frequency Doublers

A. Gopinath; Alwyn J. Seeds; J. B. Rankin

doi:10.1109/TMTT.1982.1131171

Comparison of Single- and Dual-Gate FET Frequency Doublers

A. Gopinath, Alwyn J. Seeds, J. B. Rankin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device.

Original language	English (US)
Pages (from-to)	919-920
Number of pages	2
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	30
Issue number	6
DOIs	https://doi.org/10.1109/TMTT.1982.1131171
State	Published - Jun 1982

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10.1109/TMTT.1982.1131171

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title = "Comparison of Single- and Dual-Gate FET Frequency Doublers",

abstract = "The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device.",

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Comparison of Single- and Dual-Gate FET Frequency Doublers

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