The performance of single- and dual-gate FET frequency doublers is studied by analysis and computer simulation. The theoretical predictions are in good agreement with experimental results. It is shown that the superior performance of the dual-gate FET doubler is largely due to the higher intrinsic gain of the active device.
|Original language||English (US)|
|Number of pages||2|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|State||Published - Jun 1982|