This paper presents a performance comparison of two wide band gap (WBG) devices, a silicon carbide (SiC) MOSFET and an enhancement mode gallium nitride (eGaN) FET in a resonant inverter operating at 6.78 MHz for wireless power transfer (WPT) applications. While SiC MOSFETs provide high breakdown voltage and good thermal characteristics, eGaN FETs can reduce gate losses due to small gate resistance and input capacitance. In this work, we compare a 1200 V SiC MOSFET in a single-ended class Φ2 inverter to two 650 V eGaN FETs in a push-pull class Φ2 inverter. We designed and implemented a 6.78 MHz 2.2 kW single-ended class Φ2 inverter using a 1200 V customized SiC MOSFET with low-inductance package. In our experiments, the inverter has a 93% efficiency and 2.2 kW output power with input voltage of 440 V. We also implemented a push-pull class Φ2 inverter using two 650 V eGaN FETs at 6.78 MHz. The push-pull class Φ2 inverter reduces the input current ripple because of interleaving operation. At 200 V input voltage, the push-pull inverter with two eGaN FETs provides output power of 2 kW with 96% efficiency. In order to reduce a volume and weight of the inverter, we implemented a class Φ2 inverter with 3D printed inductors.
|Original language||English (US)|
|Title of host publication||ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|State||Published - 2016|
|Event||2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States|
Duration: Sep 18 2016 → Sep 22 2016
|Name||ECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings|
|Other||2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016|
|Period||9/18/16 → 9/22/16|
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© 2016 IEEE.