Comparison of SiC and eGaN devices in a 6.78 MHz 2.2 kW resonant inverter for wireless power transfer

Jungwon Choi, Daisuke Tsukiyama, Juan Rivas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

34 Scopus citations

Abstract

This paper presents a performance comparison of two wide band gap (WBG) devices, a silicon carbide (SiC) MOSFET and an enhancement mode gallium nitride (eGaN) FET in a resonant inverter operating at 6.78 MHz for wireless power transfer (WPT) applications. While SiC MOSFETs provide high breakdown voltage and good thermal characteristics, eGaN FETs can reduce gate losses due to small gate resistance and input capacitance. In this work, we compare a 1200 V SiC MOSFET in a single-ended class Φ2 inverter to two 650 V eGaN FETs in a push-pull class Φ2 inverter. We designed and implemented a 6.78 MHz 2.2 kW single-ended class Φ2 inverter using a 1200 V customized SiC MOSFET with low-inductance package. In our experiments, the inverter has a 93% efficiency and 2.2 kW output power with input voltage of 440 V. We also implemented a push-pull class Φ2 inverter using two 650 V eGaN FETs at 6.78 MHz. The push-pull class Φ2 inverter reduces the input current ripple because of interleaving operation. At 200 V input voltage, the push-pull inverter with two eGaN FETs provides output power of 2 kW with 96% efficiency. In order to reduce a volume and weight of the inverter, we implemented a class Φ2 inverter with 3D printed inductors.

Original languageEnglish (US)
Title of host publicationECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509007370
DOIs
StatePublished - 2016
Externally publishedYes
Event2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016 - Milwaukee, United States
Duration: Sep 18 2016Sep 22 2016

Publication series

NameECCE 2016 - IEEE Energy Conversion Congress and Exposition, Proceedings

Other

Other2016 IEEE Energy Conversion Congress and Exposition, ECCE 2016
Country/TerritoryUnited States
CityMilwaukee
Period9/18/169/22/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

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