Comparison of GaAs MESFET And GaAs p-i-n Diodes as Switch Elements

A. Gopinath

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The Kurokawa-Schlosser quality factor Q is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs p-i-n has the higher Q and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.

Original languageEnglish (US)
Pages (from-to)505-506
Number of pages2
JournalIEEE Electron Device Letters
Volume6
Issue number10
DOIs
StatePublished - Oct 1985

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