The Kurokawa-Schlosser quality factor Q is used to compare the GaAs MESFET switch with the GaAs p-i-n diode switch. The MESFET device parameters are governed by the power handling capability and the specified pinchoff voltage, and the switch Q is calculated from an approximate expression. The GaAs p-i-n has been characterized using a simple diode model which is derived from detailed simulations. The comparison for typical devices shows that the GaAs p-i-n has the higher Q and therefore should have improved characteristics as a switch in terms of insertion loss and isolation.
|Original language||English (US)|
|Number of pages||2|
|Journal||IEEE Electron Device Letters|
|State||Published - Oct 1985|