Comparison of conductance and capacitance techniques for measurement of interface states in thin oxides

Research output: Contribution to journalConference articlepeer-review

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Abstract

Current trends in integrated circuit processing project gate insulators with oxide equivalent thicknesses of 1.5 to 1.0 nm. Gate oxides in this thickness range have oxide capacitances of 1 to 5 μF/cm2. When oxide capacitances are this large, traditional high-frequency capacitance-voltage techniques for measuring interface states can be inaccurate. We show that a combination of high and low frequency capacitance-voltage data, along with frequency dependent conductance methods, produce more accurate results.

Original languageEnglish (US)
Pages (from-to)K491-K498
JournalMaterials Research Society Symposium - Proceedings
Volume670
DOIs
StatePublished - Jan 1 2001
EventGate Stack and Silicide Issues in Silicon Processing II - San Francisco, CA, United States
Duration: Apr 17 2001Apr 19 2001

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