Self and nonself aligned SiGe p-metal-oxide-semiconductor modulation-doped field effect transistors fabrication processes were compared. The self aligned devices were found exhibiting higher extrinsic transconductances, lower threshold voltages, higher unity current gain cutoff frequencies, and maximum oscillation frequencies compared to nonself-aligned devices.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 2000|
|Event||44th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication - Rancho Mirage, CA, USA|
Duration: May 30 2000 → Jun 2 2000