TY - JOUR
T1 - Comparative study of quaternary Mg and Group III element co-doped ZnO thin films with transparent conductive characteristics
AU - Kim, In Young
AU - Shin, Seung Wook
AU - Gang, Myeng Gil
AU - Lee, Seung Hyoun
AU - Gurav, K. V.
AU - Patil, P. S.
AU - Yun, Jae Ho
AU - Lee, Jeong Yong
AU - Kim, Jin Hyeok
N1 - Publisher Copyright:
© 2014 Elsevier B.V.
PY - 2014/11/3
Y1 - 2014/11/3
N2 - Mg and Ga co-doped ZnO (MgxGayZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MGZO), Mg and Al co-doped ZnO (MgxAlyZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MAZO), Mg and In co-doped ZnO (MgxInyZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MIZO), Mg doped ZnO (MgxZnyO, x + y = 1, x = 0.05 and y = 0.95, MZO) and pure ZnO thin films have been prepared on the glass substrates by RF magnetron sputtering. Their structural, morphological, compositional, electrical, and optical properties were characterized. The X-ray diffraction patterns showed that all the thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase. The (0002) peak positions of MGZO, MAZO and MIZO thin films were not significantly changed. The cross-section field emission scanning electron microscopy images of MGZO, MAZO and MIZO thin films showed that all the thin films have a columnar structure with dense morphology. The MGZO thin film showed the best electrical characteristics in terms of the carrier concentration (3.7 × 1020/cm3), charge carrier mobility (8.39 cm2/Vs), and a lower resistivity (1.85 × 10- 3cm). UV-visible spectroscopy studies showed that the MGZO, MAZO and MIZO thin films exhibit high transmittance over 85% in the visible region. The MGZO thin films showed wider optical band gap energy of 3.75 eV.
AB - Mg and Ga co-doped ZnO (MgxGayZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MGZO), Mg and Al co-doped ZnO (MgxAlyZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MAZO), Mg and In co-doped ZnO (MgxInyZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MIZO), Mg doped ZnO (MgxZnyO, x + y = 1, x = 0.05 and y = 0.95, MZO) and pure ZnO thin films have been prepared on the glass substrates by RF magnetron sputtering. Their structural, morphological, compositional, electrical, and optical properties were characterized. The X-ray diffraction patterns showed that all the thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase. The (0002) peak positions of MGZO, MAZO and MIZO thin films were not significantly changed. The cross-section field emission scanning electron microscopy images of MGZO, MAZO and MIZO thin films showed that all the thin films have a columnar structure with dense morphology. The MGZO thin film showed the best electrical characteristics in terms of the carrier concentration (3.7 × 1020/cm3), charge carrier mobility (8.39 cm2/Vs), and a lower resistivity (1.85 × 10- 3cm). UV-visible spectroscopy studies showed that the MGZO, MAZO and MIZO thin films exhibit high transmittance over 85% in the visible region. The MGZO thin films showed wider optical band gap energy of 3.75 eV.
KW - Quaternary compound
KW - RF magnetron sputtering
KW - Transparent conducting oxide
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U2 - 10.1016/j.tsf.2014.02.109
DO - 10.1016/j.tsf.2014.02.109
M3 - Article
AN - SCOPUS:84912042654
SN - 0040-6090
VL - 570
SP - 321
EP - 325
JO - Thin Solid Films
JF - Thin Solid Films
IS - PB
ER -