Comparative study of quaternary Mg and Group III element co-doped ZnO thin films with transparent conductive characteristics

In Young Kim, Seung Wook Shin, Myeng Gil Gang, Seung Hyoun Lee, K. V. Gurav, P. S. Patil, Jae Ho Yun, Jeong Yong Lee, Jin Hyeok Kim

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Mg and Ga co-doped ZnO (MgxGayZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MGZO), Mg and Al co-doped ZnO (MgxAlyZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MAZO), Mg and In co-doped ZnO (MgxInyZnzO, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MIZO), Mg doped ZnO (MgxZnyO, x + y = 1, x = 0.05 and y = 0.95, MZO) and pure ZnO thin films have been prepared on the glass substrates by RF magnetron sputtering. Their structural, morphological, compositional, electrical, and optical properties were characterized. The X-ray diffraction patterns showed that all the thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase. The (0002) peak positions of MGZO, MAZO and MIZO thin films were not significantly changed. The cross-section field emission scanning electron microscopy images of MGZO, MAZO and MIZO thin films showed that all the thin films have a columnar structure with dense morphology. The MGZO thin film showed the best electrical characteristics in terms of the carrier concentration (3.7 × 1020/cm3), charge carrier mobility (8.39 cm2/Vs), and a lower resistivity (1.85 × 10- 3cm). UV-visible spectroscopy studies showed that the MGZO, MAZO and MIZO thin films exhibit high transmittance over 85% in the visible region. The MGZO thin films showed wider optical band gap energy of 3.75 eV.

Original languageEnglish (US)
Pages (from-to)321-325
Number of pages5
JournalThin Solid Films
Volume570
Issue numberPB
DOIs
StatePublished - Nov 3 2014

Keywords

  • Quaternary compound
  • RF magnetron sputtering
  • Transparent conducting oxide

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