TY - GEN
T1 - Compact modeling of parameter variations of nanoscale CMOS due to random dopant fluctuation
AU - Ye, Yun
AU - Zhu, Ying
AU - He, Hongyu
AU - Mei, Jinhe
AU - Cao, Yu
AU - He, Jin
PY - 2013
Y1 - 2013
N2 - In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the variability modeling taking both threshold voltage (Vth) and mobility (μ) into account is presented. The difference between the proposed method and the traditional approach using only Vth variation for RDF is compared and discussed.
AB - In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the variability modeling taking both threshold voltage (Vth) and mobility (μ) into account is presented. The difference between the proposed method and the traditional approach using only Vth variation for RDF is compared and discussed.
KW - Nanoscale CMOS circuit
KW - Random dopant fluctuation (RDF)
KW - Statistical compact modeling
UR - http://www.scopus.com/inward/record.url?scp=84881108192&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84881108192&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84881108192
SN - 9781482205848
T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
SP - 552
EP - 555
BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
T2 - Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Y2 - 12 May 2013 through 16 May 2013
ER -