Compact modeling of a PD SOI MESFET for wide temperature designs

Keyphrases

• Wide Temperature Range 100%
• FDSOI 100%
• MESFET 100%
• Compact Modeling 100%
• Silicon-on-insulator 33%
• Compact Model 33%
• TOM3 33%
• Transistor 16%
• Commercially Available 16%
• Charge-based 16%
• Verilog 16%
• Breakdown Voltage 16%
• Behavioral Model 16%
• CMOS Process 16%
• Channel Current 16%
• Four-terminal 16%
• Gate Oxide 16%
• GaAs MESFET 16%
• Circuit Application 16%
• Silicon-on-insulator MOSFETs 16%
• Buried Oxide 16%
• S-parameter Measurement 16%
• Capacitance Model 16%
• Transistor Model 16%
• Substrate Voltage 16%
• DC Model 16%
• RF Model 16%
• Measurement Basis 16%
• Extreme Environment Electronics 16%
• Voltage Reference Circuits 16%

Engineering

• Field-Effect Transistor 100%
• Silicon on Insulator 100%
• Temperature Range 33%
• Metal-Oxide-Semiconductor Field-Effect Transistor 16%
• Gate Oxide 16%
• Scattering Parameters 16%
• Gallium Arsenide 16%
• Breakdown Voltage 16%
• Behavioral Model 16%

Material Science

• Silicon 100%
• Field Effect Transistors 100%
• Electronic Circuit 33%
• Oxide Compound 33%
• Transistor 16%
• Gallium Arsenide 16%
• Capacitance 16%
• Metal-Oxide-Semiconductor Field-Effect Transistor 16%