Communication between magnetic tunnel junctions using spin-polarized current for logic applications

Andrew Lyle; Xiaofeng Yao; Farbod Ebrahimi; Jonathan Harms; Jian Ping Wang

doi:10.1109/TMAG.2010.2045355

Communication between magnetic tunnel junctions using spin-polarized current for logic applications

Andrew Lyle, Xiaofeng Yao, Farbod Ebrahimi, Jonathan Harms, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We investigated spin-polarized current controlled magnetic tunnel junctions (MTJs) connected with a nano-magnetic channel using micromagnetic simulations. A spin polarized current is used to switch the MTJ and form a domain wall in the nanochannel that is captured at a notch in the channel. A current can then be applied along the nanochannel to drive the domain wall to the other MTJ. The nanochannel design was optimized by varying MTJ pillar size, nanochannel width, material, and notch sizes. Both in-plane and perpendicular anisotropy were simulated. Perpendicular anisotropy was found to be the most beneficial by alleviating the dominate effect of shape anisotropy. Four different nanochannels were connected to a single MTJ with perpendicular anisotropy and a domain wall formed in each channel. This allows fan out to be realized and consequently more complex logic functions. The current densities to switch the MTJ elements and drive the domain wall were found to be on the order of 1 × 10⁸ A/cm² and 6 × 10⁹ A/cm², respectively.

Original language	English (US)
Article number	5467461
Pages (from-to)	2216-2219
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	46
Issue number	6
DOIs	https://doi.org/10.1109/TMAG.2010.2045355
State	Published - Jun 2010

Bibliographical note

Funding Information:
This work was supported in part by the MRSEC Program of the National Science Foundation under Awards DMR-0212302, DMR-0819885, and NSF ECCS (0702264).

Keywords

Magnetic logic
Micromagnetic simulation
Nanochannel
Spin logic
Spin torque transfer
Spin-polarized current

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10.1109/TMAG.2010.2045355

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title = "Communication between magnetic tunnel junctions using spin-polarized current for logic applications",

abstract = "We investigated spin-polarized current controlled magnetic tunnel junctions (MTJs) connected with a nano-magnetic channel using micromagnetic simulations. A spin polarized current is used to switch the MTJ and form a domain wall in the nanochannel that is captured at a notch in the channel. A current can then be applied along the nanochannel to drive the domain wall to the other MTJ. The nanochannel design was optimized by varying MTJ pillar size, nanochannel width, material, and notch sizes. Both in-plane and perpendicular anisotropy were simulated. Perpendicular anisotropy was found to be the most beneficial by alleviating the dominate effect of shape anisotropy. Four different nanochannels were connected to a single MTJ with perpendicular anisotropy and a domain wall formed in each channel. This allows fan out to be realized and consequently more complex logic functions. The current densities to switch the MTJ elements and drive the domain wall were found to be on the order of 1 × 108 A/cm2 and 6 × 109 A/cm2, respectively.",

keywords = "Magnetic logic, Micromagnetic simulation, Nanochannel, Spin logic, Spin torque transfer, Spin-polarized current",

author = "Andrew Lyle and Xiaofeng Yao and Farbod Ebrahimi and Jonathan Harms and Wang, {Jian Ping}",

note = "Funding Information: This work was supported in part by the MRSEC Program of the National Science Foundation under Awards DMR-0212302, DMR-0819885, and NSF ECCS (0702264).",

year = "2010",

month = jun,

doi = "10.1109/TMAG.2010.2045355",

language = "English (US)",

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AU - Lyle, Andrew

AU - Yao, Xiaofeng

AU - Ebrahimi, Farbod

AU - Harms, Jonathan

AU - Wang, Jian Ping

N1 - Funding Information: This work was supported in part by the MRSEC Program of the National Science Foundation under Awards DMR-0212302, DMR-0819885, and NSF ECCS (0702264).

PY - 2010/6

Y1 - 2010/6

N2 - We investigated spin-polarized current controlled magnetic tunnel junctions (MTJs) connected with a nano-magnetic channel using micromagnetic simulations. A spin polarized current is used to switch the MTJ and form a domain wall in the nanochannel that is captured at a notch in the channel. A current can then be applied along the nanochannel to drive the domain wall to the other MTJ. The nanochannel design was optimized by varying MTJ pillar size, nanochannel width, material, and notch sizes. Both in-plane and perpendicular anisotropy were simulated. Perpendicular anisotropy was found to be the most beneficial by alleviating the dominate effect of shape anisotropy. Four different nanochannels were connected to a single MTJ with perpendicular anisotropy and a domain wall formed in each channel. This allows fan out to be realized and consequently more complex logic functions. The current densities to switch the MTJ elements and drive the domain wall were found to be on the order of 1 × 108 A/cm2 and 6 × 109 A/cm2, respectively.

AB - We investigated spin-polarized current controlled magnetic tunnel junctions (MTJs) connected with a nano-magnetic channel using micromagnetic simulations. A spin polarized current is used to switch the MTJ and form a domain wall in the nanochannel that is captured at a notch in the channel. A current can then be applied along the nanochannel to drive the domain wall to the other MTJ. The nanochannel design was optimized by varying MTJ pillar size, nanochannel width, material, and notch sizes. Both in-plane and perpendicular anisotropy were simulated. Perpendicular anisotropy was found to be the most beneficial by alleviating the dominate effect of shape anisotropy. Four different nanochannels were connected to a single MTJ with perpendicular anisotropy and a domain wall formed in each channel. This allows fan out to be realized and consequently more complex logic functions. The current densities to switch the MTJ elements and drive the domain wall were found to be on the order of 1 × 108 A/cm2 and 6 × 109 A/cm2, respectively.

KW - Magnetic logic

KW - Micromagnetic simulation

KW - Nanochannel

KW - Spin logic

KW - Spin torque transfer

KW - Spin-polarized current

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Communication between magnetic tunnel junctions using spin-polarized current for logic applications

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