CoMET: Composite-Input Magnetoelectric-Based Logic Technology

Meghna G. Mankalale, Zhaoxin Liang, Zhengyang Zhao, Chris H. Kim, Jian Ping Wang, Sachin S. Sapatnekar

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure- A ferromagnet (FM) with in-plane magnetic anisotropy placed on top of an intragate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW toward the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7-nm CoMET device show fast, low-energy operation, with a delay/energy of 99 ps/68 aJ for INV and 135 ps/85 aJ for MAJ3.

Original languageEnglish (US)
Article number7893717
Pages (from-to)27-36
Number of pages10
JournalIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
StatePublished - Dec 2017

Bibliographical note

Publisher Copyright:
© 2017 IEEE.


  • Design space exploration
  • Magnetoelecric (ME) logic
  • Spintronics


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