TY - JOUR
T1 - CoMET
T2 - Composite-Input Magnetoelectric-Based Logic Technology
AU - Mankalale, Meghna G.
AU - Liang, Zhaoxin
AU - Zhao, Zhengyang
AU - Kim, Chris H.
AU - Wang, Jian Ping
AU - Sapatnekar, Sachin S.
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/12
Y1 - 2017/12
N2 - This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure- A ferromagnet (FM) with in-plane magnetic anisotropy placed on top of an intragate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW toward the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7-nm CoMET device show fast, low-energy operation, with a delay/energy of 99 ps/68 aJ for INV and 135 ps/85 aJ for MAJ3.
AB - This paper proposes composite-input magnetoelectric-based logic technology (CoMET), a fast and energy-efficient spintronics device for logic applications. An input voltage is applied to a ferroelectric (FE) material, in contact with a composite structure- A ferromagnet (FM) with in-plane magnetic anisotropy placed on top of an intragate FM interconnect with perpendicular magnetic anisotropy (PMA). Through the magnetoelectric (ME) effect, the input voltage nucleates a domain wall (DW) at the input end of the PMA-FM interconnect. An applied current then rapidly propagates the DW toward the output FE structure, where the inverse-ME effect generates an output voltage. This voltage is propagated to the input of the next CoMET device using a novel circuit structure that enables efficient device cascading. The material parameters for CoMET are optimized by systematically exploring the impact of parameter choices on device performance. Simulations on a 7-nm CoMET device show fast, low-energy operation, with a delay/energy of 99 ps/68 aJ for INV and 135 ps/85 aJ for MAJ3.
KW - Design space exploration
KW - Magnetoelecric (ME) logic
KW - Spintronics
UR - http://www.scopus.com/inward/record.url?scp=85033598183&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85033598183&partnerID=8YFLogxK
U2 - 10.1109/JXCDC.2017.2690629
DO - 10.1109/JXCDC.2017.2690629
M3 - Article
AN - SCOPUS:85033598183
SN - 2329-9231
VL - 3
SP - 27
EP - 36
JO - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
JF - IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
M1 - 7893717
ER -
