Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3

Tristan K. Truttmann; Jin Jian Zhou; I. Te Lu; Anil Kumar Rajapitamahuni; Fengdeng Liu; Thomas E. Mates; Marco Bernardi; Bharat Jalan

doi:10.1038/s42005-021-00742-w

Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO₃

Tristan K. Truttmann, Jin Jian Zhou, I. Te Lu, Anil Kumar Rajapitamahuni, Fengdeng Liu, Thomas E. Mates, Marco Bernardi, Bharat Jalan

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Abstract

The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide Nd_xSr₁₋_xSnO₃ (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 10¹⁸ cm⁻³ to 2.0 × 10²⁰ cm⁻³. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm² V⁻¹ s⁻¹, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm² V⁻¹ s⁻¹ depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics.

Original language	English (US)
Article number	241
Journal	Communications Physics
Volume	4
Issue number	1
DOIs	https://doi.org/10.1038/s42005-021-00742-w
State	Published - Dec 2021

Bibliographical note

Funding Information:
This work was supported by the Air Force Office of Scientific Research (AFOSR) through Grant Nos. FA9550-19-1-0245 and FA9550-21-1-0025. Part of this work was supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-2011401. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Work at Caltech was supported as follows: J.-J.Z. was supported by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award No. DE-SC0004993. M.B. and I.-T.L. were supported by the Air Force Office of Scientific Research through the Young Investigator Program, Grant FA9550-18-1-0280.

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© 2021, The Author(s).

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title = "Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3",

abstract = "The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1−xSnO3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm−3 to 2.0 × 1020 cm−3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm2 V−1 s−1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V−1 s−1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics.",

author = "Truttmann, {Tristan K.} and Zhou, {Jin Jian} and Lu, {I. Te} and Rajapitamahuni, {Anil Kumar} and Fengdeng Liu and Mates, {Thomas E.} and Marco Bernardi and Bharat Jalan",

note = "Funding Information: This work was supported by the Air Force Office of Scientific Research (AFOSR) through Grant Nos. FA9550-19-1-0245 and FA9550-21-1-0025. Part of this work was supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-2011401. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Work at Caltech was supported as follows: J.-J.Z. was supported by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award No. DE-SC0004993. M.B. and I.-T.L. were supported by the Air Force Office of Scientific Research through the Young Investigator Program, Grant FA9550-18-1-0280. Publisher Copyright: {\textcopyright} 2021, The Author(s).",

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doi = "10.1038/s42005-021-00742-w",

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AU - Mates, Thomas E.

AU - Bernardi, Marco

AU - Jalan, Bharat

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N2 - The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1−xSnO3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm−3 to 2.0 × 1020 cm−3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm2 V−1 s−1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V−1 s−1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics.

AB - The discovery and development of ultra-wide bandgap (UWBG) semiconductors is crucial to accelerate the adoption of renewable power sources. This necessitates an UWBG semiconductor that exhibits robust doping with high carrier mobility over a wide range of carrier concentrations. Here we demonstrate that epitaxial thin films of the perovskite oxide NdxSr1−xSnO3 (SSO) do exactly this. Nd is used as a donor to successfully modulate the carrier concentration over nearly two orders of magnitude, from 3.7 × 1018 cm−3 to 2.0 × 1020 cm−3. Despite being grown on lattice-mismatched substrates and thus having relatively high structural disorder, SSO films exhibited the highest room-temperature mobility, ~70 cm2 V−1 s−1, among all known UWBG semiconductors in the range of carrier concentrations studied. The phonon-limited mobility is calculated from first principles and supplemented with a model to treat ionized impurity and Kondo scattering. This produces excellent agreement with experiment over a wide range of temperatures and carrier concentrations, and predicts the room-temperature phonon-limited mobility to be 76–99 cm2 V−1 s−1 depending on carrier concentration. This work establishes a perovskite oxide as an emerging UWBG semiconductor candidate with potential for applications in power electronics.

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Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO₃

Abstract

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Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO3

Abstract

Bibliographical note

MRSEC Support

UN SDGs

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IRG-1: Ionic Control of Materials

University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)

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Combined experimental-theoretical study of electron mobility-limiting mechanisms in SrSnO₃