A low-pressure CVD reactor was modified to create continuous compositional spreads of ZrO2/HfO2/SnO2 on a single Si(100) wafer. Anhydrous metal nitrates were used as single-source precursors to grow the films, and the compositions were mapped using Rutherford backscattering spectroscopy (RBS). An array of 100 × 100 μm2 capacitors was used to map the dielectric constant. High dielectric constants were observed for the films having high ZrO2 concentrations, while high SnO 2 concentrations correlated with low values of κ.
- Metal oxide