Combinatorial CVD of zirconium, hafnium, and tin dioxide mixtures for applications as high-κ materials

Bin Xia, Fang Chen, Stephen A. Campbell, Jeffrey T. Roberts, Wayne L. Gladfelter

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

A low-pressure CVD reactor was modified to create continuous compositional spreads of ZrO2/HfO2/SnO2 on a single Si(100) wafer. Anhydrous metal nitrates were used as single-source precursors to grow the films, and the compositions were mapped using Rutherford backscattering spectroscopy (RBS). An array of 100 × 100 μm2 capacitors was used to map the dielectric constant. High dielectric constants were observed for the films having high ZrO2 concentrations, while high SnO 2 concentrations correlated with low values of κ.

Original languageEnglish (US)
Pages (from-to)195-200
Number of pages6
JournalChemical Vapor Deposition
Volume10
Issue number4
DOIs
StatePublished - Sep 1 2004

Keywords

  • Combinatorial
  • Dielectric
  • Metal oxide

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